DMN3190LDW Datasheet and Replacement. Cross Reference Search

..1. Size:249K diodes
dmn3190ldw.pdf pdf_icon

DMN3190LDWDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID (MAX) V(BR)DSS RDS(ON) (MAX) Package TA = +25C Low Input Capacitance Fast Switching Speed 190m @ VGS = 10V 1A 30V SOT363 ESD Protected Gate335m @ VGS = 4.5V 0.75A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and An

9.1. Size:187K diodes
dmn3112sss.pdf pdf_icon

DMN3112SSSSINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOP-8L 57m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 112m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020D

9.2. Size:178K diodes
dmn3112s.pdf pdf_icon

DMN3112SN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance: Case: SOT-23 57m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 112m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-02

9.3. Size:112K diodes
dmn3115udm.pdf pdf_icon

DMN3115UDMN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT-26 60 m @ VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 80 m @ VGS = 2.5V Moisture Sensitivity: Level 1 per J-STD-020 130 m @ VGS = 1.5V Terminal Connections:

9.4. Size:578K diodes
dmn3110lcp3.pdf pdf_icon

DMN3110LCP3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low Qg & Qgd BVDSS RDS(ON) Max TA = +25C Small Footprint Low Profile 0.30mm Height 69m @ VGS = 8V 3.2A 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 80m @ VGS = 4.5V 3.0A Halogen and Antimony Free. Green Device (Note 3) Description Mecha

9.5. Size:333K diodes
dmn3110s.pdf pdf_icon

DMN3110SN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25C Fast Switching Speed 73m @ VGS = 10V 3.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) 30V 110m @ VGS = 4.5V 2.7A Quali

9.6. Size:150K diodes
dmn3150l.pdf pdf_icon

DMN3150LN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance: Case: SOT-23RDS(ON)

9.7. Size:341K diodes
dmn31d5ufz.pdf pdf_icon

DMN31D5UFZN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Package Profile, 0.42mm Maximum Package Height ID max V(BR)DSS RDS(ON) max TA = +25C 0.62mm x 0.62mm Package Footprint Low On-Resistance1.5 @ VGS = 4.5V Very Low Gate Threshold Voltage, 1.0V max 2.0 @ VGS = 2.5V 30V 0.22A ESD Protected Gate3.0 @ VGS = 1.

9.8. Size:184K diodes
dmn3135lvt.pdf pdf_icon

DMN3135LVT30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Low Input Capacitance V(BR)DSS RDS(on) TA = 25C Fast Switching Speed Low Input/Output Leakage 60m @ VGS = 10V 3.5A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 30V 100m @ VGS = 4.5V 2.8A Halogen and Antimony Free.

9.9. Size:136K diodes
dmn313dlt.pdf pdf_icon

DMN313DLTN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID V(BR)DSS RDS(ON) Low Input Capacitance TA = 25C Fast Switching Speed 2 @ VGS = 4V 270mA Low Input/Output Leakage 30V Lead Free By Design/RoHS Compliant (Note 1) 3.2 @ VGS = 2.5V 210mA ESD Protected up to 2kV "Green" Device (Note 2)

9.10. Size:163K diodes
dmn3150lw.pdf pdf_icon

DMN3150LWN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance: Case: SOT-323 RDS(ON)

9.11. Size:80K tysemi
dmn3112s.pdf pdf_icon

Product specification DMN3112SN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance: Case: SOT2357m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 112m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020 Low Gate Threshold Voltage Terminals: Finis

9.12. Size:120K tysemi
dmn3110s.pdf pdf_icon

Product specificationDMN3110S N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID maxV(BR)DSS RDS(ON) max Low Input Capacitance TA = 25C Fast Switching Speed 73m @ VGS = 10V 3.3A Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) 30V 110m @ VGS = 4.5V 2.7A Qualified to AEC-Q101 sta

9.13. Size:110K tysemi
dmn3150l.pdf pdf_icon