DMN3190LDW - описание и поиск аналогов

 ..1. Size:249K  diodes
 dmn3190ldw.pdf 

DMN3190LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID (MAX) V(BR)DSS RDS(ON) (MAX) Package TA = +25 C Low Input Capacitance Fast Switching Speed 190m @ VGS = 10V 1A 30V SOT363 ESD Protected Gate 335m @ VGS = 4.5V 0.75A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and An

 9.1. Size:187K  diodes
 dmn3112sss.pdf 

DMN3112SSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOP-8L 57m @ VGS = 10V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 112m @ VGS = 4.5V Moisture Sensitivity Level 1 per J-STD-020D

 9.2. Size:178K  diodes
 dmn3112s.pdf 

DMN3112S N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOT-23 57m @ VGS = 10V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 112m @ VGS = 4.5V Moisture Sensitivity Level 1 per J-STD-02

 9.3. Size:112K  diodes
 dmn3115udm.pdf 

DMN3115UDM N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case SOT-26 60 m @ VGS = 4.5V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 80 m @ VGS = 2.5V Moisture Sensitivity Level 1 per J-STD-020 130 m @ VGS = 1.5V Terminal Connections

 9.4. Size:578K  diodes
 dmn3110lcp3.pdf 

DMN3110LCP3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low Qg & Qgd BVDSS RDS(ON) Max TA = +25 C Small Footprint Low Profile 0.30mm Height 69m @ VGS = 8V 3.2A 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 80m @ VGS = 4.5V 3.0A Halogen and Antimony Free. Green Device (Note 3) Description Mecha

 9.5. Size:333K  diodes
 dmn3110s.pdf 

DMN3110S N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25 C Fast Switching Speed 73m @ VGS = 10V 3.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) 30V 110m @ VGS = 4.5V 2.7A Quali

 9.6. Size:150K  diodes
 dmn3150l.pdf 

DMN3150L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOT-23 RDS(ON)

 9.7. Size:341K  diodes
 dmn31d5ufz.pdf 

DMN31D5UFZ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Package Profile, 0.42mm Maximum Package Height ID max V(BR)DSS RDS(ON) max TA = +25 C 0.62mm x 0.62mm Package Footprint Low On-Resistance 1.5 @ VGS = 4.5V Very Low Gate Threshold Voltage, 1.0V max 2.0 @ VGS = 2.5V 30V 0.22A ESD Protected Gate 3.0 @ VGS = 1.

 9.8. Size:184K  diodes
 dmn3135lvt.pdf 

DMN3135LVT 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Low Input Capacitance V(BR)DSS RDS(on) TA = 25 C Fast Switching Speed Low Input/Output Leakage 60m @ VGS = 10V 3.5A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 30V 100m @ VGS = 4.5V 2.8A Halogen and Antimony Free.

 9.9. Size:136K  diodes
 dmn313dlt.pdf 

DMN313DLT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(ON) Low Input Capacitance TA = 25 C Fast Switching Speed 2 @ VGS = 4V 270mA Low Input/Output Leakage 30V Lead Free By Design/RoHS Compliant (Note 1) 3.2 @ VGS = 2.5V 210mA ESD Protected up to 2kV "Green" Device (Note 2)

 9.10. Size:163K  diodes
 dmn3150lw.pdf 

DMN3150LW N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOT-323 RDS(ON)

 9.11. Size:80K  tysemi
 dmn3112s.pdf 

Product specification DMN3112S N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case SOT23 57m @ VGS = 10V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 112m @ VGS = 4.5V Moisture Sensitivity Level 1 per J-STD-020 Low Gate Threshold Voltage Terminals Finis

 9.12. Size:120K  tysemi
 dmn3110s.pdf 

Product specification DMN3110S N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25 C Fast Switching Speed 73m @ VGS = 10V 3.3A Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) 30V 110m @ VGS = 4.5V 2.7A Qualified to AEC-Q101 sta

 9.13. Size:110K  tysemi
 dmn3150l.pdf 

Product specification DMN3150L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case SOT-23 RDS(ON)