All MOSFET. DMN33D8LDW Datasheet

 

DMN33D8LDW MOSFET. Datasheet pdf. Equivalent


   Type Designator: DMN33D8LDW
   Marking Code: N33
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 0.25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 0.55 nC
   trⓘ - Rise Time: 2.6 nS
   Cossⓘ - Output Capacitance: 11 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: SOT-363

 DMN33D8LDW Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMN33D8LDW Datasheet (PDF)

 ..1. Size:284K  diodes
 dmn33d8ldw.pdf

DMN33D8LDW DMN33D8LDW

DMN33D8LDWDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25C Fast Switching Speed 3 @ VGS = 4.5V 250 mA ESD Protected Gate to 2kV 30V 5 @ VGS = 4.0V 200 mA Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 7 @ VGS = 2.5V 100 mA

 6.1. Size:284K  diodes
 dmn33d8lv.pdf

DMN33D8LDW DMN33D8LDW

DMN33D8LVDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25C Fast Switching Speed 3 @ VGS = 4.5V 30V 350 mA ESD Protected Gate to 2kV 7 @ VGS = 2.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. G

 6.2. Size:265K  diodes
 dmn33d8l.pdf

DMN33D8LDW DMN33D8LDW

DMN33D8LN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25C 3.0 @ VGS = 10V 250mA Fast Switching Speed 30V 3.8 @ VGS = 5V 200mA Low Input/Output Leakage ESD Protected 2KV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description an

 6.3. Size:247K  diodes
 dmn33d8lt.pdf

DMN33D8LDW DMN33D8LDW

DMN33D8LTN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features N-Channel MOSFETID V(BR)DSS RDS(ON) TA = +25C Low On-Resistance5 @ VGS = 4V 200 mA Low Input Capacitance 30V 7 @ VGS = 2.5V 115 mA Fast Switching Speed Small Surface Mount Package Description ESD Protected Gate 2KV Totally Lead-Free & Fully RoHS Compliant (No

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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