DMN4008LFG Specs and Replacement
Type Designator: DMN4008LFG
Marking Code: N47
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 14.4
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Electrical Characteristics
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
Qg ⓘ - Total Gate Charge: 34
nC
tr ⓘ - Rise Time: 14.1
nS
Cossⓘ -
Output Capacitance: 257
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075
Ohm
Package:
POWERDI-3333-8
-
MOSFET ⓘ Cross-Reference Search
DMN4008LFG datasheet
..1. Size:330K diodes
dmn4008lfg.pdf 
DMN4008LFG 40V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max Small Form Factor Thermally Efficient Package Enables Higher V(BR)DSS RDS(ON) max TA = +25 C Density End Products 7.5m @ VGS = 10V 14.4A 40V Occupies Just 33% of the Board Area Occupied by SO-8 Enabli... See More ⇒
9.1. Size:649K diodes
dmn4030lk3.pdf 
A Product Line of Diodes Incorporated DMN4030LK3 40V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 30m @ VGS = 10V 13.7A Qualified to AEC-Q101 Standards... See More ⇒
9.2. Size:464K diodes
dmn4026sk3.pdf 
DMN4026SK3 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switch (UIS) Test in Production ID V(BR)DSS RDS(ON) Low On-resistance TC = +25 C Fast Switching Speed Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 24m @VGS = 10V 28A 40V Halogen and Antimony Free. Green Device (Note 3) 32m @VGS = 4.5... See More ⇒
9.3. Size:694K diodes
dmn4034ssd.pdf 
A Product Line of Diodes Incorporated DMN4034SSD 40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 34m @ VGS= 10V 6.3A Qualified to AEC-Q101 Standards for High Reliability 40V 59m @ VGS= 4.5V 4.8A Me... See More ⇒
9.4. Size:664K diodes
dmn4015lk3.pdf 
A Product Line of Diodes Incorporated DMN4015LK3 40V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 15m @ VGS= 10V 20.8A 40V 20m @ VGS= 4.5V 18.0A Mech... See More ⇒
9.5. Size:287K diodes
dmn4010lk3.pdf 
DMN4010LK3 Green 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID max Low On-Resistance V(BR)DSS RDS(ON) max TC = +25 C Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 11.5m @ VGS = 10V 39A 40V Halogen and Antimony Free. Green Device (Note 3) 14.5m @ VGS = 4.5V 35A Qualified to AEC-Q101 Standards for Hi... See More ⇒
9.6. Size:676K diodes
dmn4027sss.pdf 
A Product Line of Diodes Incorporated DMN4027SSS 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 27m @ VGS= 10V 8.0A Qualified to AEC-Q101 Standards for High Reliability 40V 47m @ VGS= 4.5V 6.1A Mechanic... See More ⇒
9.7. Size:677K diodes
dmn4034sss.pdf 
A Product Line of Diodes Incorporated DMN4034SSS 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 34m @ VGS= 10V 7.2A Qualified to AEC-Q101 Standards for High Reliability 40V 59m @ VGS= 4.5V 5.5A Mechani... See More ⇒
9.8. Size:286K diodes
dmn4020lfde.pdf 
DMN4020LFDE 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.6mm profile ideal for low profile applications PCB footprint of 4mm2 ID max V(BR)DSS RDS(ON) max Low Gate Threshold Voltage TA = +25 C Low On-Resistance 20m @ VGS = 10V 8.0A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 40V Halogen and Antim... See More ⇒
9.9. Size:404K diodes
dmn4031ssdq.pdf 
DMN4031SSDQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max Low On-Resistance BVDSS RDS(ON) Max TA = +25 C (Note 7) Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 31m @ VGS = 10V 7.0A 40V Halogen and Antimony Free. Green Device (Note 3) 50m @ VGS = 4.5V 5.8A Qualifie... See More ⇒
9.10. Size:206K diodes
dmn4060svt.pdf 
DMN4060SVT 45V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance ID Low On-Resistance V(BR)DSS RDS(on) max TA = 25 C Fast Switching Speed Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1) 46m @ VGS = 10V 4.8A "Green" Device (Note 2) 45V 62m @ VGS = 4.5V 4.1A Qualified to AEC-Q101 Standards... See More ⇒
9.11. Size:424K diodes
dmn4031ssd.pdf 
DMN4031SSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max Low On-Resistance V(BR)DSS RDS(ON) Max TA = +25 C (Note 5) Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 31m @ VGS = 10V 7.0A 40V Halogen and Antimony Free. Green Device (Note 3) 50m @ VGS = 4.5V 5.6A Qualifie... See More ⇒
9.12. Size:534K diodes
dmn4035l.pdf 
DMN4035L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance BV R max I max Low Input Capacitance DSS DS(ON) D Fast Switching Speed Low Input/Output Leakage 42m @ V = 10V 4.6A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 40V Halogen and Antimony Free. Green Device (Note 3) 52m @ V = 4... See More ⇒
9.13. Size:695K diodes
dmn4027ssd.pdf 
A Product Line of Diodes Incorporated DMN4027SSD 40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 27m @ VGS= 10V 7.1A Qualified to AEC-Q101 Standards for High Reliability 40V 47m @ VGS= 4.5V 5.4A Mec... See More ⇒
9.14. Size:206K diodes
dmn4060svt-7.pdf 
DMN4060SVT 45V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance ID Low On-Resistance V(BR)DSS RDS(on) max TA = 25 C Fast Switching Speed Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1) 46m @ VGS = 10V 4.8A "Green" Device (Note 2) 45V 62m @ VGS = 4.5V 4.1A Qualified to AEC-Q101 Standards... See More ⇒
9.15. Size:220K diodes
dmn4010lfg.pdf 
DMN4010LFG 40V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID max Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) max TA = +25 C Small, form factor, thermally efficient package enables higher density end products 12m @ VGS = 10V 11.5A 40V Occupies just 33% of the board area occupied by SO-8 enabling... See More ⇒
9.16. Size:645K diodes
dmn4036lk3.pdf 
A Product Line of Diodes Incorporated DMN4036LK3 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 36m @ VGS= 10V 12.2A Qualified to AEC-Q101 Standards for High Reliability 40V 61m @ VGS= 4.5V 9.4A Mechani... See More ⇒
9.18. Size:266K inchange semiconductor
dmn4030lk3.pdf 
isc N-Channel MOSFET Transistor DMN4030LK3 FEATURES Drain Current I = 9.6A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒
9.19. Size:266K inchange semiconductor
dmn4026sk3.pdf 
isc N-Channel MOSFET Transistor DMN4026SK3 FEATURES Drain Current I = 28A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 24m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒
9.20. Size:266K inchange semiconductor
dmn4010lk3.pdf 
isc N-Channel MOSFET Transistor DMN4010LK3 FEATURES Drain Current I = 39A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 11.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu... See More ⇒
9.21. Size:266K inchange semiconductor
dmn4036lk3.pdf 
isc N-Channel MOSFET Transistor DMN4036LK3 FEATURES Drain Current I = 12.2A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 36m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu... See More ⇒
9.22. Size:265K inchange semiconductor
dmn4040sk3.pdf 
isc N-Channel MOSFET Transistor DMN4040SK3 FEATURES Drain Current I = 13.8A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu... See More ⇒
Detailed specifications: DMN31D5UFZ
, DMN32D4SDW
, DMN33D8L
, DMN33D8LDW
, DMN33D8LT
, DMN33D8LV
, DMN3730UFB-7
, DMN3900UFA
, 20N50
, DMN4010LFG
, DMN4010LK3
, DMN4020LFDE
, DMN4026SK3
, DMN4026SSD
, DMN4060SVT-7
, DMN53D0L
, DMN53D0LDW
.
Keywords - DMN4008LFG MOSFET specs
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DMN4008LFG equivalent finder
DMN4008LFG pdf lookup
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