DMN4008LFG - описание и поиск аналогов

 ..1. Size:330K  diodes
 dmn4008lfg.pdf 

DMN4008LFG 40V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max Small Form Factor Thermally Efficient Package Enables Higher V(BR)DSS RDS(ON) max TA = +25 C Density End Products 7.5m @ VGS = 10V 14.4A 40V Occupies Just 33% of the Board Area Occupied by SO-8 Enabli

 9.1. Size:649K  diodes
 dmn4030lk3.pdf 

A Product Line of Diodes Incorporated DMN4030LK3 40V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 30m @ VGS = 10V 13.7A Qualified to AEC-Q101 Standards

 9.2. Size:464K  diodes
 dmn4026sk3.pdf 

DMN4026SK3 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switch (UIS) Test in Production ID V(BR)DSS RDS(ON) Low On-resistance TC = +25 C Fast Switching Speed Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 24m @VGS = 10V 28A 40V Halogen and Antimony Free. Green Device (Note 3) 32m @VGS = 4.5

 9.3. Size:694K  diodes
 dmn4034ssd.pdf 

A Product Line of Diodes Incorporated DMN4034SSD 40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 34m @ VGS= 10V 6.3A Qualified to AEC-Q101 Standards for High Reliability 40V 59m @ VGS= 4.5V 4.8A Me

 9.4. Size:664K  diodes
 dmn4015lk3.pdf 

A Product Line of Diodes Incorporated DMN4015LK3 40V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 15m @ VGS= 10V 20.8A 40V 20m @ VGS= 4.5V 18.0A Mech

 9.5. Size:287K  diodes
 dmn4010lk3.pdf 

DMN4010LK3 Green 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID max Low On-Resistance V(BR)DSS RDS(ON) max TC = +25 C Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 11.5m @ VGS = 10V 39A 40V Halogen and Antimony Free. Green Device (Note 3) 14.5m @ VGS = 4.5V 35A Qualified to AEC-Q101 Standards for Hi

 9.6. Size:676K  diodes
 dmn4027sss.pdf 

A Product Line of Diodes Incorporated DMN4027SSS 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 27m @ VGS= 10V 8.0A Qualified to AEC-Q101 Standards for High Reliability 40V 47m @ VGS= 4.5V 6.1A Mechanic

 9.7. Size:677K  diodes
 dmn4034sss.pdf 

A Product Line of Diodes Incorporated DMN4034SSS 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 34m @ VGS= 10V 7.2A Qualified to AEC-Q101 Standards for High Reliability 40V 59m @ VGS= 4.5V 5.5A Mechani

 9.8. Size:286K  diodes
 dmn4020lfde.pdf 

DMN4020LFDE 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.6mm profile ideal for low profile applications PCB footprint of 4mm2 ID max V(BR)DSS RDS(ON) max Low Gate Threshold Voltage TA = +25 C Low On-Resistance 20m @ VGS = 10V 8.0A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 40V Halogen and Antim

 9.9. Size:404K  diodes
 dmn4031ssdq.pdf 

DMN4031SSDQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max Low On-Resistance BVDSS RDS(ON) Max TA = +25 C (Note 7) Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 31m @ VGS = 10V 7.0A 40V Halogen and Antimony Free. Green Device (Note 3) 50m @ VGS = 4.5V 5.8A Qualifie

 9.10. Size:206K  diodes
 dmn4060svt.pdf 

DMN4060SVT 45V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance ID Low On-Resistance V(BR)DSS RDS(on) max TA = 25 C Fast Switching Speed Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1) 46m @ VGS = 10V 4.8A "Green" Device (Note 2) 45V 62m @ VGS = 4.5V 4.1A Qualified to AEC-Q101 Standards

 9.11. Size:424K  diodes
 dmn4031ssd.pdf 

DMN4031SSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max Low On-Resistance V(BR)DSS RDS(ON) Max TA = +25 C (Note 5) Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 31m @ VGS = 10V 7.0A 40V Halogen and Antimony Free. Green Device (Note 3) 50m @ VGS = 4.5V 5.6A Qualifie

 9.12. Size:534K  diodes
 dmn4035l.pdf 

DMN4035L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance BV R max I max Low Input Capacitance DSS DS(ON) D Fast Switching Speed Low Input/Output Leakage 42m @ V = 10V 4.6A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 40V Halogen and Antimony Free. Green Device (Note 3) 52m @ V = 4

 9.13. Size:695K  diodes
 dmn4027ssd.pdf 

A Product Line of Diodes Incorporated DMN4027SSD 40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 27m @ VGS= 10V 7.1A Qualified to AEC-Q101 Standards for High Reliability 40V 47m @ VGS= 4.5V 5.4A Mec

 9.14. Size:206K  diodes
 dmn4060svt-7.pdf 

DMN4060SVT 45V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance ID Low On-Resistance V(BR)DSS RDS(on) max TA = 25 C Fast Switching Speed Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1) 46m @ VGS = 10V 4.8A "Green" Device (Note 2) 45V 62m @ VGS = 4.5V 4.1A Qualified to AEC-Q101 Standards

 9.15. Size:220K  diodes
 dmn4010lfg.pdf 

DMN4010LFG 40V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID max Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) max TA = +25 C Small, form factor, thermally efficient package enables higher density end products 12m @ VGS = 10V 11.5A 40V Occupies just 33% of the board area occupied by SO-8 enabling

 9.16. Size:645K  diodes
 dmn4036lk3.pdf 

A Product Line of Diodes Incorporated DMN4036LK3 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 36m @ VGS= 10V 12.2A Qualified to AEC-Q101 Standards for High Reliability 40V 61m @ VGS= 4.5V 9.4A Mechani

 9.17. Size:308K  diodes
 dmn4026ssd.pdf 

 9.18. Size:266K  inchange semiconductor
 dmn4030lk3.pdf 

isc N-Channel MOSFET Transistor DMN4030LK3 FEATURES Drain Current I = 9.6A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

 9.19. Size:266K  inchange semiconductor
 dmn4026sk3.pdf 

isc N-Channel MOSFET Transistor DMN4026SK3 FEATURES Drain Current I = 28A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 24m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 9.20. Size:266K  inchange semiconductor
 dmn4010lk3.pdf 

isc N-Channel MOSFET Transistor DMN4010LK3 FEATURES Drain Current I = 39A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 11.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu

 9.21. Size:266K  inchange semiconductor
 dmn4036lk3.pdf 

isc N-Channel MOSFET Transistor DMN4036LK3 FEATURES Drain Current I = 12.2A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 36m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu

 9.22. Size:265K  inchange semiconductor
 dmn4040sk3.pdf 

isc N-Channel MOSFET Transistor DMN4040SK3 FEATURES Drain Current I = 13.8A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu