All MOSFET. DMN62D0SFD Datasheet

 

DMN62D0SFD MOSFET. Datasheet pdf. Equivalent


   Type Designator: DMN62D0SFD
   Marking Code: K62
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 0.54 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 0.39 nC
   trⓘ - Rise Time: 3.81 nS
   Cossⓘ - Output Capacitance: 4.4 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: X1-DFN1212-3

 DMN62D0SFD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMN62D0SFD Datasheet (PDF)

 ..1. Size:216K  diodes
 dmn62d0sfd.pdf

DMN62D0SFD DMN62D0SFD

DMN62D0SFDN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance Low Gate Threshold Voltage ID V(BR)DSS RDS(ON) Low Input Capacitance TA = 25C Fast Switching Speed ESD Protected Gate to 2kV 2 @ VGS = 10V 540mA Lead Free/RoHS Compliant (Note 1) 60V Green Device (Note 2) Qualified to AEC-Q101 Standard

 7.1. Size:270K  diodes
 dmn62d0lfb.pdf

DMN62D0SFD DMN62D0SFD

DMN62D0LFBN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID V(BR)DSS RDS(ON) Low Input Capacitance TA = 25C Fast Switching Speed 2 @ VGS = 4V 100mA Low Input/Output Leakage 60V ESD Protected 2.5 @ VGS = 2.5V 50mA Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qual

 7.2. Size:323K  diodes
 dmn62d0lfd.pdf

DMN62D0SFD DMN62D0SFD

DMN62D0LFD N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID V(BR)DSS RDS(ON) TA = +25C Low Input Capacitance Fast Switching Speed 2 @ VGS = 4V 310mA 60V Low Input/Output Leakage 2.5 @ VGS = 2.5V 295mA ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Haloge

 7.3. Size:456K  diodes
 dmn62d0u.pdf

DMN62D0SFD DMN62D0SFD

DMN62D0U N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-Resistance BVDSS RDS(ON) max TA = +25C Low Input Capacitance 2 @ VGS = 4.5V 380mA 60V Fast Switching Speed 340mA 2.5 @ VGS = 2.5V Low Input/Output Leakage ESD Protected Up To 1kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Desc

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: GSM1330S | FDT459N

 

 
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