DMN65D8L MOSFET. Datasheet pdf. Equivalent
Type Designator: DMN65D8L
Marking Code: MM6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.37 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 0.31 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 0.87 nC
trⓘ - Rise Time: 2.8 nS
Cossⓘ - Output Capacitance: 3.2 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: SOT-23
DMN65D8L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMN65D8L Datasheet (PDF)
dmn65d8l.pdf
DMN65D8LN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID V(BR)DSS RDS(ON) Package Low Gate Threshold Voltage TA = +25C Low Input Capacitance 3 @ VGS = 10V 310mA Fast Switching Speed 60V SOT23 Small Surface Mount Package 4 @ VGS = 5V 270mA ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Not
dmn65d8lw.pdf
DMN65D8LWN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID V(BR)DSS RDS(ON) Package Low Gate Threshold Voltage TA = +25C Low Input Capacitance 3 @ VGS = 10V 300mA Fast Switching Speed 60V SOT323 Small Surface Mount Package 4 @ VGS = 5V 260mA ESD Protected Gate, 1KV (HBM) Lead-Free Finish; RoHS Compliant
dmn65d8lq.pdf
DMN65D8LQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID V(BR)DSS RDS(ON) Package TA = +25C Low Gate Threshold Voltage Low Input Capacitance 310mA 3 @ VGS = 10V 60V SOT23 Fast Switching Speed 4 @ VGS = 5V 270mA Small Surface Mount Package ESD Protected Gate Description Totally Lead-Free & Full
dmn65d8ldw.pdf
GreenDMN65D8LDWDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Dual N-Channel MOSFETID V(BR)DSS RDS(ON) Package Low On-ResistanceTA = +25C Low Gate Threshold Voltage 8 @ VGS = 5V 170mA Low Input Capacitance 60V SOT363 6 @ VGS = 10V 200mA Fast Switching Speed Small Surface Mount Package ESD Protected Gate, 1KV (HBM)
dmn65d8lfb.pdf
DMN65D8LFBN-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits N-Channel MOSFETID V(BR)DSS RDS(ON) Low On-Resistance TA = 25C Low Gate Threshold Voltage 3.0 @ VGS = 10V 400mA Low Input Capacitance 60V Fast Switching Speed 4.0 @ VGS = 5V 330mA Small Surface Mount Package ESD Protected Gate, 1.2kV HBM L
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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