All MOSFET. DMS05N60 Datasheet

 

DMS05N60 MOSFET. Datasheet pdf. Equivalent


   Type Designator: DMS05N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 0.02 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.55 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 2.6 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 700 Ohm
   Package: SOT-23

 DMS05N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMS05N60 Datasheet (PDF)

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 dms05n60.pdf

DMS05N60 DMS05N60

DMS05N60 N-Channel Depletion-Mode MOSFET FEATURES Depletion Mode (Normally On) Advanced Planar Technology Rugged Poly-silicon Gate Cell Structure Fast Switching Speed RoHS Compliant/Lead Free ESD Sensitive BVDSX RDS(ON) (Max.) IDSS,min Applications 600V 700 12mA Normally-on Switches SMPS start-up Circuit Linear Amplifier Con

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FDD2582 | FDD5810F085

 

 
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