DMS05N60 Specs and Replacement
Type Designator: DMS05N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.02 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 2.6 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 700 Ohm
Package: SOT-23
DMS05N60 substitution
- MOSFET ⓘ Cross-Reference Search
DMS05N60 datasheet
dms05n60.pdf
DMS05N60 N-Channel Depletion-Mode MOSFET FEATURES Depletion Mode (Normally On) Advanced Planar Technology Rugged Poly-silicon Gate Cell Structure Fast Switching Speed RoHS Compliant/Lead Free ESD Sensitive BVDSX RDS(ON) (Max.) IDSS,min Applications 600V 700 12mA Normally-on Switches SMPS start-up Circuit Linear Amplifier Con... See More ⇒
Detailed specifications: DMP6023LSS, DMP6050SSD, DMP6110SSD, DMP6110SSS, DMP6180SK3, DMP6185SE, DMP6185SK3, DMP6250SE, IRFB4227, DMS2085LSD, DMS2095LFDB, DMS3012SFG, DMS3014SFG, DMS3014SSS, DMS3015SSS, DMS3016SSS, DMS3017SSD
Keywords - DMS05N60 MOSFET specs
DMS05N60 cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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