All MOSFET. DMS3017SSD Datasheet

 

DMS3017SSD Datasheet and Replacement


   Type Designator: DMS3017SSD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.19 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27.8 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: SO-8
 

 DMS3017SSD substitution

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DMS3017SSD Datasheet (PDF)

 ..1. Size:202K  diodes
dms3017ssd.pdf pdf_icon

DMS3017SSD

DMS3017SSDASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data DIOFET utilize a unique patented process to monolithically Case: SO-8integrate a MOSFET and a Schottky in a single die to deliver: Case Material: Molded Plastic, Green Molding Compound. Low RDS(on) minimizes conduction loss UL Flammability Classification Rating 94V-0

 8.1. Size:555K  fairchild semi
fdms3016dc.pdf pdf_icon

DMS3017SSD

July 2013FDMS3016DCN-Channel Dual CoolTM PowerTrench MOSFET 30 V, 49 A, 6.0 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 6.0 m at VGS = 10 V, ID = 12 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 9.0 m at VGS

 8.2. Size:161K  diodes
dms3016sss.pdf pdf_icon

DMS3017SSD

DMS3016SSSN-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data DIOFET utilizes a unique patented process to monolithically Case: SO-8integrate a MOSFET and a Schottky in a single die to deliver: Case Material: Molded Plastic, Green Molding Compound. Low RDS(ON) - minimizes conduction losses UL Flammability Classification Rating 94V-0

 8.3. Size:192K  diodes
dms3012sfg.pdf pdf_icon

DMS3017SSD

DMS3012SFG30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Product Summary Features DIOFET utilizes a unique patented process to monolithically ID V(BR)DSS RDS(ON) Package integrate a MOSFET and a Schottky in a single die to deliver: TA = +25C Low RDS(ON) minimize conduction losses 10m @ VGS = 10V 12A Low VSD reducing the losses due to bo

Datasheet: DMS05N60 , DMS2085LSD , DMS2095LFDB , DMS3012SFG , DMS3014SFG , DMS3014SSS , DMS3015SSS , DMS3016SSS , STP75NF75 , DMS3019SSD , DMT3008LFDF , DMT5015LFDF , DMT6008LFG , DMT6010LFG , DMT6016LFDF , DMT6016LPS , DMT6016LSS .

History: RSS100N03TB | HFP2N65U | PMPB10EN | NCE50NF220K | APT14F100S | AM2340N | MPSW65M046CFD

Keywords - DMS3017SSD MOSFET datasheet

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