Справочник MOSFET. DMS3017SSD

 

DMS3017SSD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: DMS3017SSD
   Маркировка: S3017SD
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.19 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 14.3 nC
   trⓘ - Время нарастания: 27.8 ns
   Cossⓘ - Выходная емкость: 160 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm
   Тип корпуса: SO-8

 Аналог (замена) для DMS3017SSD

 

 

DMS3017SSD Datasheet (PDF)

 ..1. Size:202K  diodes
 dms3017ssd.pdf

DMS3017SSD DMS3017SSD

DMS3017SSDASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data DIOFET utilize a unique patented process to monolithically Case: SO-8integrate a MOSFET and a Schottky in a single die to deliver: Case Material: Molded Plastic, Green Molding Compound. Low RDS(on) minimizes conduction loss UL Flammability Classification Rating 94V-0

 8.1. Size:555K  fairchild semi
 fdms3016dc.pdf

DMS3017SSD DMS3017SSD

July 2013FDMS3016DCN-Channel Dual CoolTM PowerTrench MOSFET 30 V, 49 A, 6.0 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 6.0 m at VGS = 10 V, ID = 12 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 9.0 m at VGS

 8.2. Size:161K  diodes
 dms3016sss.pdf

DMS3017SSD DMS3017SSD

DMS3016SSSN-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data DIOFET utilizes a unique patented process to monolithically Case: SO-8integrate a MOSFET and a Schottky in a single die to deliver: Case Material: Molded Plastic, Green Molding Compound. Low RDS(ON) - minimizes conduction losses UL Flammability Classification Rating 94V-0

 8.3. Size:192K  diodes
 dms3012sfg.pdf

DMS3017SSD DMS3017SSD

DMS3012SFG30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Product Summary Features DIOFET utilizes a unique patented process to monolithically ID V(BR)DSS RDS(ON) Package integrate a MOSFET and a Schottky in a single die to deliver: TA = +25C Low RDS(ON) minimize conduction losses 10m @ VGS = 10V 12A Low VSD reducing the losses due to bo

 8.4. Size:157K  diodes
 dms3016sssa.pdf

DMS3017SSD DMS3017SSD

DMS3016SSSAN-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data DIOFET utilizes a unique patented process to monolithically Case: SO-8integrate a MOSFET and a Schottky in a single die to deliver: Case Material: Molded Plastic, Green Molding Compound. Low RDS(ON) - minimizes conduction losses UL Flammability Classification Rating 94V-0

 8.5. Size:158K  diodes
 dms3014sss.pdf

DMS3017SSD DMS3017SSD

DMS3014SSSN-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data DIOFET utilizes a unique patented process to monolithically Case: SO-8integrate a MOSFET and a Schottky in a single die to deliver: Case Material: Molded Plastic, Green Molding Compound. Low RDS(ON) - minimizes conduction losses UL Flammability Classification Rating 94V-0

 8.6. Size:166K  diodes
 dms3014sfg.pdf

DMS3017SSD DMS3017SSD

DMS3014SFG30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits DIOFET utilizes a unique patented process to monolithically ID max V(BR)DSS RDS(ON) max integrate a MOSFET and a Schottky in a single die to deliver: TA = 25C Low RDS(ON) minimize conduction losses Low VSD reducing the losses due to body diode conduction 13m

 8.7. Size:152K  diodes
 dms3015sss.pdf

DMS3017SSD DMS3017SSD

DMS3015SSSN-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data DIOFET utilizes a unique patented process to monolithically Case: SO-8integrate a MOSFET and a Schottky in a single die to deliver: Case Material: Molded Plastic, Green Molding Compound. Low RDS(ON) - minimizes conduction losses UL Flammability Classification Rating 94V-0

 8.8. Size:199K  diodes
 dms3019ssd.pdf

DMS3017SSD DMS3017SSD

DMS3019SSDASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data DIOFET utilize a unique patented process to monolithically Case: SO-8integrate a MOSFET and a Schottky in a single die to deliver: Case Material: Molded Plastic, Green Molding Compound. UL Low RDS(on) minimizes conduction loss Flammability Classification Rating 94V-0

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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