DMT6010LFG MOSFET Datasheet: N-Ch, 60V, 13A. Full specification with pinout and replacement list

DMT6010LFG Specs and Replacement

Type Designator: DMT6010LFG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.3 nS

Cossⓘ - Output Capacitance: 746 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: POWERDI3333-8

DMT6010LFG substitution

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DMT6010LFG datasheet

..1. Size:384K diodes
dmt6010lfg.pdf pdf_icon

DMT6010LFG N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized. ID max V(BR)DSS RDS(ON) max TC = +25 C Excellent Qgd x RDS (ON) Product (FOM) Advanced Technology for DC-DC Converters 7.5m @ VGS = 10V 30A Small form factor thermally efficient package enables higher 60V density end ... See More ⇒

7.1. Size:351K diodes
dmt6010sct.pdf pdf_icon

DMT6010SCT 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID 100% Unclamped Inductive Switching Ensures More Reliable BVDSS RDS(ON) Max TC = +25 C and Robust End Application 60V 7.2m @ VGS = 10V 98A Low Input Capacitance Low Input/Output Leakage Lead-Free Finish; RoHS compliant (Notes 1 & 2) Description Halogen and Antimony Fre... See More ⇒

7.2. Size:261K inchange semiconductor
dmt6010sct.pdf pdf_icon

isc N-Channel MOSFET Transistor DMT6010SCT FEATURES Drain Current I = 98A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 7.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒

8.1. Size:639K 1
dmt6016lps-13.pdf pdf_icon

DMT6016LPS 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package - Cooler Running Applications V(BR)DSS RDS(ON) TC = +25 C High Conversion Efficiency 15m @ VGS = 10V 32 A Low RDS(ON) Minimizes On-State Losses 60V 24 A 24m @ VGS = 4.5V Low Input Capacitance Fast Switching Speed ... See More ⇒