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DMT6016LSS Specs and Replacement


   Type Designator: DMT6016LSS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.2 nS
   Cossⓘ - Output Capacitance: 282 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: SO-8
 

 DMT6016LSS substitution

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DMT6016LSS Specs

 ..1. Size:296K  diodes
 dmt6016lss.pdf pdf_icon

DMT6016LSS

DMT6016LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25 C 18m @ VGS = 10V 9.2 A Fast Switching Speed 60V 7.5 A 28m @ VGS = 4.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3... See More ⇒

 6.1. Size:639K  1
 dmt6016lps-13.pdf pdf_icon

DMT6016LSS

DMT6016LPS 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package - Cooler Running Applications V(BR)DSS RDS(ON) TC = +25 C High Conversion Efficiency 15m @ VGS = 10V 32 A Low RDS(ON) Minimizes On-State Losses 60V 24 A 24m @ VGS = 4.5V Low Input Capacitance Fast Switching Speed ... See More ⇒

 6.2. Size:337K  diodes
 dmt6016lfdf.pdf pdf_icon

DMT6016LSS

DMT6016LFDF 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max 100% Unclamped Inductive Switch (UIS) test in production V(BR)DSS RDS(ON) max TA = +25 C 0.6mm profile ideal for low profile applications 16m @ VGS = 10V 8.9A PCB footprint of 4mm2 60V 27m @ VGS = 4.5V 6.8A Low On-Resistance Totally Lead-Free & Ful... See More ⇒

 6.3. Size:602K  diodes
 dmt6016lps.pdf pdf_icon

DMT6016LSS

DMT6016LPS 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package - Cooler Running Applications V(BR)DSS RDS(ON) TC = +25 C High Conversion Efficiency 15m @ VGS = 10V 32 A Low RDS(ON) Minimizes On-State Losses 60V 24 A 24m @ VGS = 4.5V Low Input Capacitance Fast Switching Speed ... See More ⇒

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Detailed specifications: DMS3017SSD , DMS3019SSD , DMT3008LFDF , DMT5015LFDF , DMT6008LFG , DMT6010LFG , DMT6016LFDF , DMT6016LPS , IRF9540N , DMT8012LFG , DMTH8012LK3 , DN1509 , DN2450 , DN2470 , DN2530 , DN2535 , DN2540 .

History: NVATS5A106PLZ

Keywords - DMT6016LSS MOSFET specs

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