All MOSFET. IPD110N12N3 Datasheet

 

IPD110N12N3 Datasheet and Replacement


   Type Designator: IPD110N12N3
   Marking Code: 110N12N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 49 nC
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 408 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TO-252
 

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IPD110N12N3 Datasheet (PDF)

 ..1. Size:587K  infineon
 ipds110n12n3g ips110n12n3g ips110n12n3 ipd110n12n3.pdf pdf_icon

IPD110N12N3

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOS Power-Transistor, 120VOptiMOS 3 Power-TransistorIPD_S110N12N3 GData SheetRev. 2.4FinalIndustrial & MultimarketIPD110N12N3 G IPS110N12N3 GOptiMOSTM3Power-TransistorProduct SummaryFeaturesVDS 120 V N-channel, normal levelRDS(on),max11m Excellent gate charge x R product (FOM)DS(on)

 ..2. Size:242K  inchange semiconductor
 ipd110n12n3.pdf pdf_icon

IPD110N12N3

isc N-Channel MOSFET Transistor IPD110N12N3,IIPD110N12N3FEATURESStatic drain-source on-resistance:RDS(on)11mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

Datasheet: IPD050N10N5 , IPD053N08N3 , IPD068N10N3 , IPD068P03L3 , IPD079N06L3 , IPD082N10N3 , IPD088N06N3 , IPD096N08N3 , MMIS60R580P , IPD122N10N3 , IPD127N06L , IPD135N08N3 , IPD16CN10N , IPD180N10N3 , IPD200N15N3 , IPD220N06L3 , IPD25CN10N .

History: 2P524A9 | APT50M65JLL | SRC4N65DTR | PSMN8R7-80BS | FS10KM-9 | SRC4N65D1 | 2SK1679

Keywords - IPD110N12N3 MOSFET datasheet

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