IPD110N12N3 Datasheet. Specs and Replacement

Type Designator: IPD110N12N3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 408 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: TO-252

IPD110N12N3 substitution

- MOSFET ⓘ Cross-Reference Search

 

IPD110N12N3 datasheet

 ..1. Size:587K  infineon
 ipds110n12n3g ips110n12n3g ips110n12n3 ipd110n12n3.pdf pdf_icon

IPD110N12N3

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS Power-Transistor, 120V OptiMOS 3 Power-Transistor IPD_S110N12N3 G Data Sheet Rev. 2.4 Final Industrial & Multimarket IPD110N12N3 G IPS110N12N3 G OptiMOSTM3Power-Transistor Product Summary Features VDS 120 V N-channel, normal level RDS(on),max 11 m Excellent gate charge x R product (FOM) DS(on)... See More ⇒

 ..2. Size:242K  inchange semiconductor
 ipd110n12n3.pdf pdf_icon

IPD110N12N3

isc N-Channel MOSFET Transistor IPD110N12N3,IIPD110N12N3 FEATURES Static drain-source on-resistance RDS(on) 11m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE... See More ⇒

Detailed specifications: IPD050N10N5, IPD053N08N3, IPD068N10N3, IPD068P03L3, IPD079N06L3, IPD082N10N3, IPD088N06N3, IPD096N08N3, 7N60, IPD122N10N3, IPD127N06L, IPD135N08N3, IPD16CN10N, IPD180N10N3, IPD200N15N3, IPD220N06L3, IPD25CN10N

Keywords - IPD110N12N3 MOSFET specs

 IPD110N12N3 cross reference

 IPD110N12N3 equivalent finder

 IPD110N12N3 pdf lookup

 IPD110N12N3 substitution

 IPD110N12N3 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility