SFP9Z14 Datasheet and Replacement
Type Designator: SFP9Z14
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 6.7 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 9 nC
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO220
SFP9Z14 substitution
SFP9Z14 Datasheet (PDF)
sfp9z14.pdf

Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -6.7 A Improved Gate Charge 175oC Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -60V Low RDS(ON) : 0.362 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Rat
sfp9z24.pdf

Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.28 Rugged Gate Oxide Technology Lower Input CapacitanceID = -9.7 A Improved Gate Charge 175oC Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -60V Low RDS(ON) : 0.206 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Ra
sfp9z34.pdf

Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = -18 A Improved Gate Charge 175oC Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -60V Low RDS(ON) : 0.106 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Rat
Datasheet: SFP9610 , SFP9614 , SFP9620 , SFP9624 , SFP9630 , SFP9634 , SFP9640 , SFP9644 , IRF730 , SFP9Z24 , SFP9Z34 , SFR2955 , SFR9014 , SFR9024 , SFR9034 , SFR9110 , SFR9120 .
Keywords - SFP9Z14 MOSFET datasheet
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