All MOSFET. IPP076N15N5 Datasheet

 

IPP076N15N5 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPP076N15N5
   Marking Code: 076N15N5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.6 V
   |Id|ⓘ - Maximum Drain Current: 112 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 49 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 900 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0076 Ohm
   Package: TO220

 IPP076N15N5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPP076N15N5 Datasheet (PDF)

 ..1. Size:1542K  infineon
 ipp076n15n5.pdf

IPP076N15N5 IPP076N15N5

IPP076N15N5MOSFETTO-220-3OptiMOS5 Power-Transistor, 150 VtabFeatures Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Very low reverse recovery charge (Qrr) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency switching and

 ..2. Size:245K  inchange semiconductor
 ipp076n15n5.pdf

IPP076N15N5 IPP076N15N5

isc N-Channel MOSFET Transistor IPP076N15N5IIPP076N15N5FEATURESStatic drain-source on-resistance:RDS(on) 7.6mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Ideal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T

 6.1. Size:571K  infineon
 ipp076n12n3g ipi076n12n3g.pdf

IPP076N15N5 IPP076N15N5

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 6.2. Size:545K  infineon
 ipi076n12n3g ipp076n12n3g.pdf

IPP076N15N5 IPP076N15N5

IPI076N12N3 G IPP076N12N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 120 V N-channel, normal levelRDS(on)max 7.6 mW Excellent gate charge x R product (FOM)DS(on)ID 100 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; halogen free Qualified according to JEDEC1) for target applicati

 6.3. Size:245K  inchange semiconductor
 ipp076n12n3.pdf

IPP076N15N5 IPP076N15N5

isc N-Channel MOSFET Transistor IPP076N12N3IIPP076N12N3FEATURESStatic drain-source on-resistance:RDS(on) 7.6mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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