IPP076N15N5 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IPP076N15N5
Маркировка: 076N15N5
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 214 W
Предельно допустимое напряжение сток-исток |Uds|: 150 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4.6 V
Максимально допустимый постоянный ток стока |Id|: 112 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 49 nC
Время нарастания (tr): 4 ns
Выходная емкость (Cd): 900 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0076 Ohm
Тип корпуса: TO220
Аналог (замена) для IPP076N15N5
IPP076N15N5 Datasheet (PDF)
ipp076n15n5.pdf
IPP076N15N5MOSFETTO-220-3OptiMOS5 Power-Transistor, 150 VtabFeatures Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Very low reverse recovery charge (Qrr) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency switching and
ipp076n15n5.pdf
isc N-Channel MOSFET Transistor IPP076N15N5IIPP076N15N5FEATURESStatic drain-source on-resistance:RDS(on) 7.6mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Ideal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T
ipp076n12n3g ipi076n12n3g.pdf
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ipi076n12n3g ipp076n12n3g.pdf
IPI076N12N3 G IPP076N12N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 120 V N-channel, normal levelRDS(on)max 7.6 mW Excellent gate charge x R product (FOM)DS(on)ID 100 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; halogen free Qualified according to JEDEC1) for target applicati
ipp076n12n3.pdf
isc N-Channel MOSFET Transistor IPP076N12N3IIPP076N12N3FEATURESStatic drain-source on-resistance:RDS(on) 7.6mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(
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