IPP093N06N3 PDF and Equivalents Search

 

IPP093N06N3 Specs and Replacement

Type Designator: IPP093N06N3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 71 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 640 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0093 Ohm

Package: TO220

IPP093N06N3 substitution

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IPP093N06N3 datasheet

 ..1. Size:295K  infineon
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IPP093N06N3

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 ..2. Size:687K  infineon
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IPP093N06N3

pe IPB090N06N3 G IPP093N06N3 G 3 Power-Transistor Product Summary Features V D P 6?A BH>3 A53C96931C9?> 4A9E5B 1>4 43 43 ,&), R m , ?> =1G ,& P G35... See More ⇒

 ..3. Size:245K  inchange semiconductor
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IPP093N06N3

isc N-Channel MOSFET Transistor IPP093N06N3 IIPP093N06N3 FEATURES Static drain-source on-resistance RDS(on) 9m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒

 0.1. Size:687K  infineon
ipb090n06n3g ipp093n06n3g.pdf pdf_icon

IPP093N06N3

pe IPB090N06N3 G IPP093N06N3 G 3 Power-Transistor Product Summary Features V D P 6?A BH>3 A53C96931C9?> 4A9E5B 1>4 43 43 ,&), R m , ?> =1G ,& P G35... See More ⇒

Detailed specifications: IPP052N06L3, IPP057N06N3, IPP057N08N3, IPP05CN10N, IPP070N08N3, IPP075N15N3, IPP076N12N3, IPP076N15N5, 2N7002, IPP100N08N3, IPP110N20N3, IPP111N15N3, IPP114N12N3, IPP12CN10L, IPP147N12N3, IPP16CN10N, IPP200N15N3

Keywords - IPP093N06N3 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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