IPP093N06N3 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPP093N06N3
Marking Code: 093N06N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 71 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 36 nC
trⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 640 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0093 Ohm
Package: TO220
IPP093N06N3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPP093N06N3 Datasheet (PDF)
ipb090n06n3 ipp093n06n3.pdf
Type IPB090N06N3 G IPP093N06N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 60 VDS for sync. rectification, drives and dc/dc SMPSR 9mDS(on),max (SMD) Excellent gate charge x R product (FOM)DS(on)I 50 AD Very low on-resistance RDS(on) N-channel, normal level Avalanche rated Qualified according to JEDEC1) for target applications
ipp093n06n3 ipb093n06n3.pdf
pe IPB090N06N3 G IPP093N06N3 G 3 Power-TransistorProduct SummaryFeaturesV D P 6?A BH>3 A53C96931C9?> 4A9E5B 1>4 43 43 ,&),R m , ?> =1G ,& P G35
ipp093n06n3.pdf
isc N-Channel MOSFET Transistor IPP093N06N3IIPP093N06N3FEATURESStatic drain-source on-resistance:RDS(on) 9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)
ipb090n06n3g ipp093n06n3g.pdf
pe IPB090N06N3 G IPP093N06N3 G 3 Power-TransistorProduct SummaryFeaturesV D P 6?A BH>3 A53C96931C9?> 4A9E5B 1>4 43 43 ,&),R m , ?> =1G ,& P G35
ipp096n03l.pdf
pe %% # ! % # ! % (>.;?6?@%>EFeaturesD Q 2CD CG:D49:?8 ') - . 7@B -'*-m - @? >2H Q ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BCD1)Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?CQ ( 492??6= =@8:4 =6F6=Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n)Q /6BI =@G @? B6C:CD2?46 D n)Q F2=2?496 B2D65Q *3 7B66 A=2D:?8 , @"- 4@>A=:2?DQ "2=@86? 7B66 244@B
ipp096n03l .pdf
pe %% # ! % # ! % (>.;?6?@%>EFeaturesD Q 2CD CG:D49:?8 ') - . 7@B -'*-m - @? >2H Q ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BCD1)Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?CQ ( 492??6= =@8:4 =6F6=Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n)Q /6BI =@G @? B6C:CD2?46 D n)Q F2=2?496 B2D65Q *3 7B66 A=2D:?8 , @"- 4@>A=:2?DQ "2=@86? 7B66 244@B
ipb096n03lg ipp096n03lg.pdf
pe %% # ! % # ! % (>.;?6?@%>EFeaturesD Q 2CD CG:D49:?8 ') - . 7@B -'*-m - @? >2H Q ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BCD1)Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?CQ ( 492??6= =@8:4 =6F6=Q H46==6?D 82D6 492B86 H D n) AB@5E4D ) ' Q /6BI =@G @? B6C:CD2?46 D n)Q F2=2?496 B2D65Q *3 7B66 A=2D:?8 , @"- 4@>A=:2?DQ "2=@86? 7B66 244@B5:?
ipb09n03la ipi09n03la ipp09n03la.pdf
IPB09N03LAIPI09N03LA, IPP09N03LAOptiMOS2 Power-TransistorProduct SummaryFeaturesV 25 VDS Ideal for high-frequency dc/dc convertersR (SMD version) 8.9m DS(on),max N-channelI 50 AD Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Superior thermal resistance 1
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918