IPP093N06N3 - описание и поиск аналогов

pe IPB090N06N3 G IPP093N06N3 G 3 Power-Transistor Product Summary Features V D P 6?A BH>3 A53C96931C9?> 4A9E5B 1>4 43 43 ,&), R m , ?> =1G ,& P G35

isc N-Channel MOSFET Transistor IPP093N06N3 IIPP093N06N3 FEATURES Static drain-source on-resistance RDS(on) 9m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 )

pe IPB090N06N3 G IPP093N06N3 G 3 Power-Transistor Product Summary Features V D P 6?A BH>3 A53C96931C9?> 4A9E5B 1>4 43 43 ,&), R m , ?> =1G ,& P G35

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IPB09N03LA IPI09N03LA, IPP09N03LA OptiMOS 2 Power-Transistor Product Summary Features V 25 V DS Ideal for high-frequency dc/dc converters R (SMD version) 8.9 m DS(on),max N-channel I 50 A D Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Superior thermal resistance 1