Справочник MOSFET. IPP093N06N3

 

IPP093N06N3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPP093N06N3
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 71 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 40 ns
   Cossⓘ - Выходная емкость: 640 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0093 Ohm
   Тип корпуса: TO220

 Аналог (замена) для IPP093N06N3

 

 

IPP093N06N3 Datasheet (PDF)

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 ipb090n06n3 ipp093n06n3.pdf

IPP093N06N3 IPP093N06N3

Type IPB090N06N3 G IPP093N06N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 60 VDS for sync. rectification, drives and dc/dc SMPSR 9mDS(on),max (SMD) Excellent gate charge x R product (FOM)DS(on)I 50 AD Very low on-resistance RDS(on) N-channel, normal level Avalanche rated Qualified according to JEDEC1) for target applications

 ..2. Size:687K  infineon
 ipp093n06n3 ipb093n06n3.pdf

IPP093N06N3 IPP093N06N3

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 ..3. Size:245K  inchange semiconductor
 ipp093n06n3.pdf

IPP093N06N3 IPP093N06N3

isc N-Channel MOSFET Transistor IPP093N06N3IIPP093N06N3FEATURESStatic drain-source on-resistance:RDS(on) 9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)

 0.1. Size:687K  infineon
 ipb090n06n3g ipp093n06n3g.pdf

IPP093N06N3 IPP093N06N3

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 9.1. Size:614K  infineon
 ipp096n03l.pdf

IPP093N06N3 IPP093N06N3

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 9.2. Size:617K  infineon
 ipp096n03l .pdf

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 9.3. Size:636K  infineon
 ipb096n03lg ipp096n03lg.pdf

IPP093N06N3 IPP093N06N3

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 9.4. Size:311K  infineon
 ipb09n03la ipi09n03la ipp09n03la.pdf

IPP093N06N3 IPP093N06N3

IPB09N03LAIPI09N03LA, IPP09N03LAOptiMOS2 Power-TransistorProduct SummaryFeaturesV 25 VDS Ideal for high-frequency dc/dc convertersR (SMD version) 8.9m DS(on),max N-channelI 50 AD Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Superior thermal resistance 1

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