All MOSFET. IPP530N15N3 Datasheet

 

IPP530N15N3 Datasheet and Replacement


   Type Designator: IPP530N15N3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 21 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm
   Package: TO-220
 

 IPP530N15N3 substitution

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IPP530N15N3 Datasheet (PDF)

 ..1. Size:245K  inchange semiconductor
 ipp530n15n3.pdf pdf_icon

IPP530N15N3

isc N-Channel MOSFET Transistor IPP530N15N3IIPP530N15N3FEATURESStatic drain-source on-resistance:RDS(on) 53mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T

 0.1. Size:983K  infineon
 ipb530n15n3 ipb530n15n3g ipi530n15n3g ipd530n15n3g ipp530n15n3g.pdf pdf_icon

IPP530N15N3

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 0.2. Size:961K  infineon
 ipb530n15n3g ipd530n15n3g ipi530n15n3g ipp530n15n3g.pdf pdf_icon

IPP530N15N3

IPB530N15N3 G IPD530N15N3 GIPI530N15N3 G IPP530N15N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 150 V N-channel, normal levelRDS(on),max 53 mW Excellent gate charge x R product (FOM)DS(on)ID 21 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; Halogen Free Qualified according to

Datasheet: IPP111N15N3 , IPP114N12N3 , IPP12CN10L , IPP147N12N3 , IPP16CN10N , IPP200N15N3 , IPP200N25N3 , IPP320N20N3 , AO4407 , IPP600N25N3 , IPP60R060C7 , IPP60R080P7 , IPP60R099P7 , IPP60R120C7 , IPP60R170CFD7 , IPP60R180P7 , IPP60R280CFD7 .

History: IRFP453R

Keywords - IPP530N15N3 MOSFET datasheet

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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