ISTP16NF06 Datasheet. Specs and Replacement
Type Designator: ISTP16NF06 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 70 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO-220
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ISTP16NF06 substitution
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ISTP16NF06 datasheet
stp16nf06 istp16nf06.pdf
N-Channel MOSFET Transistor STP16NF06 ISTP16NF06 DESCRIPTION Drain Current I = 16A@ T =25 D C Static Drain-Source On-Resistance R = 100m (Max) DS(on) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high packing density for low on-resistance rugged avalanche characteristics and less critical ... See More ⇒
istp140n6f7.pdf
isc N-Channel MOSFET Transistor ISTP140N6F7 FEATURES With TO-220 packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT ... See More ⇒
Detailed specifications: IRFR7546, IRFR7740, IRFR7746, IRFR812, IRFR825TR, IRFR8314, IRFS3307ZTRL, IRFS7534TRLPBF, 2N60, MDF18N50, MDP1723, MDP1922, P50NF06, SCT3060AL, SPA11N60C3E8185, SPD30N03S2L, SPD50N03S2
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