ISTP16NF06 Datasheet and Replacement
Type Designator: ISTP16NF06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 70 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO-220
ISTP16NF06 substitution
ISTP16NF06 Datasheet (PDF)
stp16nf06 istp16nf06.pdf

N-Channel MOSFET Transistor STP16NF06ISTP16NF06DESCRIPTIONDrain Current I = 16A@ T =25D CStatic Drain-Source On-Resistance: R = 100m(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONShigh packing density for low on-resistancerugged avalanchecharacteristics and less critical
istp140n6f7.pdf

isc N-Channel MOSFET Transistor ISTP140N6F7FEATURESWith TO-220 packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
Datasheet: IRFR7546 , IRFR7740 , IRFR7746 , IRFR812 , IRFR825TR , IRFR8314 , IRFS3307ZTRL , IRFS7534TRLPBF , IRFZ48N , MDF18N50 , MDP1723 , MDP1922 , P50NF06 , SCT3060AL , SPA11N60C3E8185 , SPD30N03S2L , SPD50N03S2 .
History: FDBL9401-F085 | FDB9409-F085 | FDB1D7N10CL7 | FDB024N08BL7 | MTBB5N10L3 | FDB0165N807L | IRFRC20PBF
Keywords - ISTP16NF06 MOSFET datasheet
ISTP16NF06 cross reference
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History: FDBL9401-F085 | FDB9409-F085 | FDB1D7N10CL7 | FDB024N08BL7 | MTBB5N10L3 | FDB0165N807L | IRFRC20PBF



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