All MOSFET. ISTP16NF06 Datasheet

 

ISTP16NF06 MOSFET. Datasheet pdf. Equivalent

Type Designator: ISTP16NF06

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 45 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 16 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 10 nC

Rise Time (tr): 18 nS

Drain-Source Capacitance (Cd): 70 pF

Maximum Drain-Source On-State Resistance (Rds): 0.1 Ohm

Package: TO-220C

ISTP16NF06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ISTP16NF06 Datasheet (PDF)

1.1. stp16nf06 istp16nf06.pdf Size:229K _inchange_semiconductor

ISTP16NF06
ISTP16NF06

N-Channel MOSFET Transistor STP16NF06,ISTP16NF06 ·DESCRIPTION ·Drain Current I = 16A@ T =25℃ D C ·Static Drain-Source On-Resistance : R = 100mΩ(Max) DS(on) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·high packing density for low on-resistance,rugged avalanche characteristics and less critical

5.1. istp140n6f7.pdf Size:260K _inchange_semiconductor

ISTP16NF06
ISTP16NF06

isc N-Channel MOSFET Transistor ISTP140N6F7 ·FEATURES ·With TO-220 packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·DC-DC converters ·Motor control ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top