All MOSFET. SUD70090E Datasheet

 

SUD70090E Datasheet and Replacement


   Type Designator: SUD70090E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 33 nC
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 845 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0089 Ohm
   Package: TO-252
 

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SUD70090E Datasheet (PDF)

 ..1. Size:196K  vishay
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SUD70090E

SUD70090Ewww.vishay.comVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY ThunderFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) c Qg (TYP.) Maximum 175 C junction temperature0.0089 at VGS = 10 V 50100 33 nC Qgd / Qgs ratio

 ..2. Size:243K  inchange semiconductor
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SUD70090E

isc N-Channel MOSFET Transistor SUD70090EFEATURESStatic drain-source on-resistance:RDS(on)8.9mEnhancement mode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDC/DC converterPower toolsMotor drive switchABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou

Datasheet: MDF18N50 , MDP1723 , MDP1922 , P50NF06 , SCT3060AL , SPA11N60C3E8185 , SPD30N03S2L , SPD50N03S2 , HY1906P , 2N3380 , 2N3382 , 2N3384 , 2N3386 , 2N3970 , 2N3971 , 2N3972 , 2N4342 .

History: SPB07N60C2

Keywords - SUD70090E MOSFET datasheet

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