All MOSFET. SUD70090E Datasheet

 

SUD70090E MOSFET. Datasheet pdf. Equivalent


   Type Designator: SUD70090E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 33 nC
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 845 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0089 Ohm
   Package: TO-252

 SUD70090E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SUD70090E Datasheet (PDF)

 ..1. Size:196K  vishay
 sud70090e.pdf

SUD70090E SUD70090E

SUD70090Ewww.vishay.comVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY ThunderFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) c Qg (TYP.) Maximum 175 C junction temperature0.0089 at VGS = 10 V 50100 33 nC Qgd / Qgs ratio

 ..2. Size:243K  inchange semiconductor
 sud70090e.pdf

SUD70090E SUD70090E

isc N-Channel MOSFET Transistor SUD70090EFEATURESStatic drain-source on-resistance:RDS(on)8.9mEnhancement mode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDC/DC converterPower toolsMotor drive switchABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou

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History: AOD4184 | APM4820K | SI6415DQ | 2SK4047-01S | UT3N06L-TN3-R | AFN3458 | BSZ014NE2LS5IF

 

 
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