SUD70090E MOSFET. Datasheet pdf. Equivalent
Type Designator: SUD70090E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 50 A
Maximum Junction Temperature (Tj): 175 °C
Maximum Drain-Source On-State Resistance (Rds): 0.0089 Ohm
Package: TO-252
SUD70090E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SUD70090E Datasheet (PDF)
1.1. sud70090e.pdf 
Size:243K _inchange_semiconductor
isc N-Channel MOSFET Transistor SUD70090E ·FEATURES ·Static drain-source on-resistance: RDS(on)≤8.9mΩ ·Enhancement mode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·DC/DC converter ·Power tools ·Motor drive switch ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou
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