All MOSFET. SFR9210 Datasheet

 

SFR9210 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SFR9210
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 19 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 1.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO252

 SFR9210 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SFR9210 Datasheet (PDF)

 ..1. Size:256K  fairchild semi
 sfr9210 sfu9210.pdf

SFR9210 SFR9210

SFR/U9210Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = -1.6 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -200V Lower RDS(ON) : 2.084 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximu

 ..2. Size:494K  samsung
 sfr9210.pdf

SFR9210 SFR9210

Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = -1.6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -200V Lower RDS(ON) : 2.084 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Ch

 8.1. Size:309K  fairchild semi
 sfu9214 sfr9214.pdf

SFR9210 SFR9210

SFR/U9214Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 4.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = -1.53 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A(Max.) @ VDS = -250V Lower RDS(ON) : 3.15 (Typ.) 2112331. Gate 2. Drain 3. SourceAbs

 8.2. Size:503K  samsung
 sfr9214.pdf

SFR9210 SFR9210

Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 4.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = -1.53 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -250V Lower RDS(ON) : 3.15 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol C

 9.1. Size:257K  fairchild semi
 sfr9220 sfu9220.pdf

SFR9210 SFR9210

SFR/U9220Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -3.1 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -200V Lower RDS(ON) : 1.111 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum

 9.2. Size:269K  fairchild semi
 sfu9224 sfr9224.pdf

SFR9210 SFR9210

SFR/U9224Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 2.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = -2.5 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -250V Lower RDS(ON) : 1.65 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum

 9.3. Size:498K  samsung
 sfr9220.pdf

SFR9210 SFR9210

Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -3.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -200V Lower RDS(ON) : 1.111 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Chara

 9.4. Size:498K  samsung
 sfr9230.pdf

SFR9210 SFR9210

Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = -5.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -200V Lower RDS(ON) : 0.581 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol C

 9.5. Size:496K  samsung
 sfr9234.pdf

SFR9210 SFR9210

Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 1.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = -4.2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -250V Lower RDS(ON) : 0.876 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol C

 9.6. Size:507K  samsung
 sfr9224.pdf

SFR9210 SFR9210

Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 2.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = -2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -250V Lower RDS(ON) : 1.65 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Charac

Datasheet: SFP9Z34 , SFR2955 , SFR9014 , SFR9024 , SFR9034 , SFR9110 , SFR9120 , SFR9130 , 5N50 , SFR9214 , SFR9220 , SFR9224 , SFS2955 , SFS9510 , SFS9520 , SFS9530 , SFS9540 .

History: IXFH15N100

 

 
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