SFR9210 Datasheet: MOSFET, P-Ch, 200V, 1.6A. Full specification with pinout and replacement list

SFR9210 Datasheet. Specs and Replacement

Type Designator: SFR9210

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 19 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO252

SFR9210 substitution

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SFR9210 datasheet

..1. Size:256K fairchild semi
sfr9210 sfu9210.pdf pdf_icon

SFR/U9210 Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = -1.6 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current 10 A (Max.) @ VDS = -200V Lower RDS(ON) 2.084 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximu... See More ⇒

..2. Size:494K samsung
sfr9210.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = -1.6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -200V Lower RDS(ON) 2.084 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Ch... See More ⇒

8.1. Size:309K fairchild semi
sfu9214 sfr9214.pdf pdf_icon

SFR/U9214 Advanced Power MOSFET FEATURES BVDSS = -250 V Avalanche Rugged Technology RDS(on) = 4.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = -1.53 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current 10 A(Max.) @ VDS = -250V Lower RDS(ON) 3.15 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Abs... See More ⇒

8.2. Size:503K samsung
sfr9214.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = -250 V Avalanche Rugged Technology RDS(on) = 4.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = -1.53 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -250V Lower RDS(ON) 3.15 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol C... See More ⇒