2N3386 Specs and Replacement
Type Designator: 2N3386
Type of Transistor: JFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.05 A
Tj ⓘ - Maximum Junction Temperature: 200 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 150 Ohm
Package: TO-72
2N3386 substitution
- MOSFET ⓘ Cross-Reference Search
2N3386 datasheet
Detailed specifications: SCT3060AL, SPA11N60C3E8185, SPD30N03S2L, SPD50N03S2, SUD70090E, 2N3380, 2N3382, 2N3384, MMIS60R580P, 2N3970, 2N3971, 2N3972, 2N4342, 2N4343, 2N4360, 2N4393C1A, 2N4393C1B
Keywords - 2N3386 MOSFET specs
2N3386 cross reference
2N3386 equivalent finder
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2N3386 substitution
2N3386 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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