2N3971 Datasheet and Replacement

   Type Designator: 2N3971
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V
   |Id| ⓘ - Maximum Drain Current: 0.08 A
   Tj ⓘ - Maximum Junction Temperature: 200 °C
   tr ⓘ - Rise Time: 15 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 60 Ohm
   Package: TO-18
     - MOSFET ⓘ Cross-Reference Search