2N4342 Specs and Replacement

Type Designator: 2N4342

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 0.01 A

Tj ⓘ - Maximum Junction Temperature: 125 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 700 Ohm

Package: TO-18

2N4342 substitution

- MOSFET ⓘ Cross-Reference Search

 

2N4342 datasheet

 ..1. Size:72K  njs
 2n4342 2n4343 2n4360.pdf pdf_icon

2N4342

... See More ⇒

 9.1. Size:304K  general electric
 2n433 2n434.pdf pdf_icon

2N4342

... See More ⇒

 9.2. Size:75K  vishay
 2n4338 2n4339 2n4340 2n4341.pdf pdf_icon

2N4342

2N4338/4339/4340/4341 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Max (mA) 2N4338 -0.3 to -1 -50 0.6 0.6 2N4339 -0.6 to -1.8 -50 0.8 1.5 2N4340 -1 to -3 -50 1.3 3.6 2N4341 -2 to -6 -50 2 9 FEATURES BENEFITS APPLICATIONS D Low Cutoff Voltage 2N4338 ... See More ⇒

 9.3. Size:197K  comset
 2n3442-2n4347.pdf pdf_icon

2N4342

2N3442 2N4347 HIGH POWER INDUSTRIAL TRANSISTORS HIGH POWER INDUSTRIAL TRANSISTORS NPN silicon transistors designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunts regulators and power switches. Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 2.0 Adc 2N4347 Collector-Emitter Susta... See More ⇒

SHOW MORE

Detailed specifications: SUD70090E, 2N3380, 2N3382, 2N3384, 2N3386, 2N3970, 2N3971, 2N3972, IRFP064N, 2N4343, 2N4360, 2N4393C1A, 2N4393C1B, 2N4393C1C, 2N4393C1D, 2N4393DCSM, 2N4416A

Keywords - 2N4342 MOSFET specs

 2N4342 cross reference

 2N4342 equivalent finder

 2N4342 pdf lookup

 2N4342 substitution

 2N4342 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs