2N4393C1C MOSFET. Datasheet pdf. Equivalent

   Type Designator: 2N4393C1C
   Type of Transistor: JFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.5 V
   |Id|ⓘ - Maximum Drain Current: 0.05 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 5 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 100 Ohm
   Package: LCC1

2N4393C1C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

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