All MOSFET. 2N4448 Datasheet

 

2N4448 Datasheet and Replacement


   Type Designator: 2N4448
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.1 A
   Tj ⓘ - Maximum Junction Temperature: 200 °C
   Cossⓘ - Output Capacitance: 18 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
   Package: TO-46
 

 2N4448 substitution

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2N4448 Datasheet (PDF)

 ..1. Size:64K  njs
 2n4445 2n4446 2n4447 2n4448.pdf pdf_icon

2N4448

 9.1. Size:444K  microsemi
 2n4440.pdf pdf_icon

2N4448

 9.2. Size:66K  microsemi
 2n4449 2n2369a.pdf pdf_icon

2N4448

TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317 Devices Qualified Level 2N2369A 2N4449 JAN 2N2369AU 2N4449U JANTX 2N2369AUA 2N4449UA JANTXV 2N2369AUB 2N4449UB MAXIMUM RATINGS Ratings Symbol All UB All others Unit Collector-Emitter Voltage 20 15 Vdc VCEO Emitter-Base Voltage 6.0 4.5 Vdc VEBO Collector-Base Voltage 40 Vdc VCBO

 9.3. Size:53K  microsemi
 2n4449ub.pdf pdf_icon

2N4448

TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317 Devices Qualified Level 2N2369A 2N4449 JAN 2N2369AU 2N4449U JANTX 2N2369AUA 2N4449UA JANTXV 2N2369AUB 2N4449UB MAXIMUM RATINGS Ratings Symbol All UB All others Unit Collector-Emitter Voltage 20 15 Vdc VCEO Emitter-Base Voltage 6.0 4.5 Vdc VEBO Collector-Base Voltage 40 Vdc VCBO

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Datasheet: 2N4416AC1C , 2N4416AC1D , 2N4416ACSM , 2N4416CSM , 2N4416DCSM , 2N4445 , 2N4446 , 2N4447 , IRF3710 , 2N5114E3 , 2N5114UB , 2N5114UBE3 , 2N5115E3 , 2N5115UB , 2N5115UBE3 , 2N5116E3 , 2N5116UB .

History: 4N80A | IRFP9242 | FHU120N03C | STP21N65M5 | WMJ30N65EM | NP89N04MUK | TK14E65W

Keywords - 2N4448 MOSFET datasheet

 2N4448 cross reference
 2N4448 equivalent finder
 2N4448 lookup
 2N4448 substitution
 2N4448 replacement

 

 
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