2N5115UBE3 Datasheet and Replacement
Type Designator: 2N5115UBE3
Type of Transistor: JFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 0.06 A
Tjⓘ - Maximum Junction Temperature: 200 °C
trⓘ - Rise Time: 20 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 100 Ohm
Package: TO-18
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2N5115UBE3 Datasheet (PDF)
2n5114ub 2n5114ube3 2n5115ub 2n5115ube3 2n5116ub 2n5116ube3.pdf

2N5114UB thru 2N5116UB Screening in reference to Available on P-CHANNEL J-FET MIL-PRF-19500 commercial versions available DESCRIPTION This low-profile surface mount device is available in military equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For t
2n5114 2n5115 2n5116.pdf

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n5114 2n5115 2n5116.pdf

P-Channel JFET SwitchCORPORATION2N5114 2N5116GENERAL DESCRIPTION ABSOLUTE MAXIMUM RATINGS(T = 25oC unless otherwise noted)AIdeal for inverting switching or "Virtual Gnd" switching intoinverting input of Op. Amp. No driver is required and 10VAC Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . . 30Vsignals can be handled using only +5V logic (TTL or CMOS). G
mx2n5114 mx2n5115 mx2n5116.pdf

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL J-FET Equivalent To MIL-PRF-19500/476 DEVICES LEVELS 2N5114 MQ = JAN Equivalent 2N5115 MX = JANTX Equivalent 2N5116 MV = JANTXV EquivalentABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test C
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: PTP08N65 | MMBF5457 | 2N3797 | 2SK3889-01L | IPD90N06S4-05 | AONS66615 | AP9962AGM
Keywords - 2N5115UBE3 MOSFET datasheet
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History: PTP08N65 | MMBF5457 | 2N3797 | 2SK3889-01L | IPD90N06S4-05 | AONS66615 | AP9962AGM



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