Справочник MOSFET. 2N5115UBE3

 

2N5115UBE3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2N5115UBE3
   Тип транзистора: JFET
   Полярность: P
   Максимальная рассеиваемая мощность (Pd): 0.5 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Минимальное напряжение отсечки |Vgs(off)|: 5 V
   Максимально допустимый постоянный ток стока |Id|: 0.06 A
   Максимальная температура канала (Tj): 200 °C
   Время нарастания (tr): 20 ns
   Сопротивление сток-исток открытого транзистора (Rds): 100 Ohm
   Тип корпуса: TO-18

 Аналог (замена) для 2N5115UBE3

 

 

2N5115UBE3 Datasheet (PDF)

 ..1. Size:235K  microsemi
2n5114ub 2n5114ube3 2n5115ub 2n5115ube3 2n5116ub 2n5116ube3.pdf

2N5115UBE3
2N5115UBE3

2N5114UB thru 2N5116UB Screening in reference to Available on P-CHANNEL J-FET MIL-PRF-19500 commercial versions available DESCRIPTION This low-profile surface mount device is available in military equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For t

 8.1. Size:85K  central
2n5114 2n5115 2n5116.pdf

2N5115UBE3

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 8.2. Size:33K  calogic
2n5114 2n5115 2n5116.pdf

2N5115UBE3
2N5115UBE3

P-Channel JFET SwitchCORPORATION2N5114 2N5116GENERAL DESCRIPTION ABSOLUTE MAXIMUM RATINGS(T = 25oC unless otherwise noted)AIdeal for inverting switching or "Virtual Gnd" switching intoinverting input of Op. Amp. No driver is required and 10VAC Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . . 30Vsignals can be handled using only +5V logic (TTL or CMOS). G

 8.3. Size:43K  microsemi
mx2n5114 mx2n5115 mx2n5116.pdf

2N5115UBE3
2N5115UBE3

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL J-FET Equivalent To MIL-PRF-19500/476 DEVICES LEVELS 2N5114 MQ = JAN Equivalent 2N5115 MX = JANTX Equivalent 2N5116 MV = JANTXV EquivalentABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test C

 8.4. Size:131K  microsemi
2n5114e3 2n5115e3 2n5116e3.pdf

2N5115UBE3
2N5115UBE3

2N5114 thru 2N5116 Screening in reference to Available on P-CHANNEL J-FET MIL-PRF-19500 commercial versions available DESCRIPTION This leaded device is available in high-reliability equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For the latest infor

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: 2N4392

 

 
Back to Top