All MOSFET. SFS9510 Datasheet

 

SFS9510 Datasheet and Replacement


   Type Designator: SFS9510
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 16 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 9 nC
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO220F
 

 SFS9510 substitution

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SFS9510 Datasheet (PDF)

 ..1. Size:502K  samsung
sfs9510.pdf pdf_icon

SFS9510

Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = -2.5 A Improved Gate Charge 175oC Operating Temperature Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.912 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Ra

 9.1. Size:503K  samsung
sfs9530.pdf pdf_icon

SFS9510

Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = -8 A Improved Gate Charge 175oC Operating Temperature Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.225 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Rati

 9.2. Size:493K  samsung
sfs9520.pdf pdf_icon

SFS9510

Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.6 Rugged Gate Oxide Technology Lower Input CapacitanceID = -4.6 A Improved Gate Charge 175oC Operating Temperature Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.444 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Ra

 9.3. Size:501K  samsung
sfs9540.pdf pdf_icon

SFS9510

Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = -10.7 A Improved Gate Charge 175oC Operating Temperature Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.161 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Ra

Datasheet: SFR9110 , SFR9120 , SFR9130 , SFR9210 , SFR9214 , SFR9220 , SFR9224 , SFS2955 , CEP83A3 , SFS9520 , SFS9530 , SFS9540 , SFS9610 , SFS9614 , SFS9620 , SFS9624 , SFS9630 .

History: FDB12N50TM

Keywords - SFS9510 MOSFET datasheet

 SFS9510 cross reference
 SFS9510 equivalent finder
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