SFS9510 MOSFET Datasheet: P-Ch, 100V, 2.5A. Full specification with pinout and replacement list

SFS9510 Specs and Replacement

Type Designator: SFS9510

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 16 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 50 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO220F

SFS9510 substitution

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SFS9510 datasheet

..1. Size:502K samsung
sfs9510.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = -2.5 A Improved Gate Charge 175oC Operating Temperature Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -100V Low RDS(ON) 0.912 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ra... See More ⇒

9.1. Size:503K samsung
sfs9530.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = -8 A Improved Gate Charge 175oC Operating Temperature Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -100V Low RDS(ON) 0.225 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Rati... See More ⇒

9.2. Size:493K samsung
sfs9520.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 0.6 Rugged Gate Oxide Technology Lower Input Capacitance ID = -4.6 A Improved Gate Charge 175oC Operating Temperature Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -100V Low RDS(ON) 0.444 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ra... See More ⇒

9.3. Size:501K samsung
sfs9540.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = -10.7 A Improved Gate Charge 175oC Operating Temperature Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -100V Low RDS(ON) 0.161 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ra... See More ⇒

Detailed specifications: SFR9110 , SFR9120 , SFR9130 , SFR9210 , SFR9214 , SFR9220 , SFR9224 , SFS2955 , AOD4184A , SFS9520 , SFS9530 , SFS9540 , SFS9610 , SFS9614 , SFS9620 , SFS9624 , SFS9630 .