2N7002C1A Specs and Replacement

Type Designator: 2N7002C1A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V

|Id| ⓘ - Maximum Drain Current: 0.115 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm

Package: SOT-23

2N7002C1A substitution

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2N7002C1A datasheet

 ..1. Size:289K  semelab
 2n7002c1a 2n7002c1b.pdf pdf_icon

2N7002C1A

N-CHANNEL ENHANCEMENT MODE MOSFET 2N7002C1 VDSS = 60V , ID = 115mA, RDS(ON) = 7.5 Fast Switching Low Threshold Voltage Integral Source-Drain Body Diode Hermetic Ceramic Surface Mount Package (SOT-23 compatible) High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VDS Drain Source Voltage 6... See More ⇒

 6.1. Size:329K  semelab
 2n7002c1c 2n7002c1d.pdf pdf_icon

2N7002C1A

N-CHANNEL ENHANCEMENT MODE MOSFET 2N7002C1A / 2N7002C1B, 2N7002C1C / 2N7002C1D VDSS = 60V , ID = 115mA, RDS(ON) = 7.5 Fast Switching Low Threshold Voltage Integral Source-Drain Body Diode Hermetic Ceramic Surface Mount Package (SOT-23 compatible) High Reliability Screening Options Available Variants C1C & C1D with solder dip finished pads (63Sn... See More ⇒

 7.1. Size:76K  philips
 2n7002ck.pdf pdf_icon

2N7002C1A

2N7002CK 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 11 September 2009 Product data sheet 1. Product profile 1.1 General description ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features Logic-level compatible Very fast switching Trench MOSFET ... See More ⇒

 7.2. Size:585K  nxp
 2n7002ck.pdf pdf_icon

2N7002C1A

2N7002CK 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 11 September 2009 Product data sheet 1. Product profile 1.1 General description ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features Logic-level compatible Very fast switching Trench MOSFET ... See More ⇒

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Detailed specifications: 2N7000G, 2N7000RLRA, 2N7000RLRAG, 2N7000RLRMG, 2N7000RLRPG, 2N7002-7, 2N7002-7-F, 2N7002BKMB, SPP20N60C3, 2N7002C1B, 2N7002C1C, 2N7002C1D, 2N7002CSM, 2N7002DCSM, 2N7002DSGP, 2N7002EGP, 2N7002ESEGP

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