2N7002-G Datasheet and Replacement. Cross Reference Search

2N7002-G Datasheet (PDF)

..1. Size:106K comchip
2n7002-g.pdf pdf_icon

MOSFET2N7002-G (N-Channel)RoHS DeviceFeaturesSOT-23 Power dissipation : 0.35W0.119(3.00)0.110(2.80)DEquivalent Circuit0.056(1.40)0.047(1.20)DG S0.083(2.10)G : Gate 0.066(1.70)0.006(0.15)S : Source 0.002(0.05)GD : Drain0.044(1.10)0.103(2.60)0.035(0.90)0.086(2.20)S0.006(0.15)max0.020(0.50)Maximum Ratings (at TA=25C)0.013(0.35)Symbol 0.00

7.1. Size:276K philips
2n7002-03.pdf pdf_icon

2N7002N-channel enhancement mode field-effect transistorRev. 03 27 July 2000 Product specification1. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:2N7002 in SOT23.2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount package.3.

7.2. Size:127K diodes
2n7002-7-f 2n7002-7.pdf pdf_icon

2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID max V(BR)DSS RDS(ON) max Low Gate Threshold Voltage TA = 25C Low Input Capacitance 60V 7.5 @ VGS = 5V 210mA Fast Switching Speed Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Dev

7.3. Size:936K kexin
2n7002-3.pdf pdf_icon

SMD Type MOSFETN-Channel Enhancement MOSFET2N7002SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.1Features3High density cell design for low RDS(ON)Voltage controlled small signal switchRugged and reliable1 2High saturation current capability+0.02+0.10.15 -0.020.95-0.1+0.11.9-0.21.Base1 GATE2.Emitter2 SOURCE3.collector3 DRAINAbsolute Maximum Ratings

Datasheet: 2N7002C1C , 2N7002C1D , 2N7002CSM , 2N7002DCSM , 2N7002DSGP , 2N7002EGP , 2N7002ESEGP , 2N7002ESGP , AO4407 , 2N7002GP , 2N7002GP-A , 2N7002KT1G , 2N7002KTB , 2N7002K-TP , 2N7002SESGP , 2N7002SGP , 2N7002SSGP .