2N7002-G - описание и поиск аналогов

 ..1. Size:106K  comchip
 2n7002-g.pdf 

MOSFET 2N7002-G (N-Channel) RoHS Device Features SOT-23 Power dissipation 0.35W 0.119(3.00) 0.110(2.80) D Equivalent Circuit 0.056(1.40) 0.047(1.20) D G S 0.083(2.10) G Gate 0.066(1.70) 0.006(0.15) S Source 0.002(0.05) G D Drain 0.044(1.10) 0.103(2.60) 0.035(0.90) 0.086(2.20) S 0.006(0.15)max 0.020(0.50) Maximum Ratings (at TA=25 C) 0.013(0.35) Symbol 0.00

 7.1. Size:276K  philips
 2n7002-03.pdf 

2N7002 N-channel enhancement mode field-effect transistor Rev. 03 27 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability 2N7002 in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount package. 3.

 7.2. Size:127K  diodes
 2n7002-7-f 2n7002-7.pdf 

2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Gate Threshold Voltage TA = 25 C Low Input Capacitance 60V 7.5 @ VGS = 5V 210mA Fast Switching Speed Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Dev

 7.3. Size:936K  kexin
 2n7002-3.pdf 

SMD Type MOSFET N-Channel Enhancement MOSFET 2N7002 SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 Features 3 High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable 1 2 High saturation current capability +0.02 +0.1 0.15 -0.02 0.95-0.1 +0.1 1.9-0.2 1.Base 1 GATE 2.Emitter 2 SOURCE 3.collector 3 DRAIN Absolute Maximum Ratings