2N7297 Datasheet and Replacement
Type Designator: 2N7297
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO-204AA
2N7297 substitution
2N7297 Datasheet (PDF)
2n7291 2n7293 2n7295 2n7297.pdf

INCH POUND The documentation and process conversion measures necessary to comply with this revision shall MIL-PRF-19500/606Bbe completed by 28 October 2004. 28 July 2004 SUPERSEDINGMIL-PRF-19500/606A 6 February 1998 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7291, 2N729
jansr2n7292.pdf

JANSR2N7292Formerly FRF150R4 25A, 100V, 0.070 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 25A, 100V, rDS(ON) = 0.070 The Intersil Corporation has designed a series of SECONDGENERATION hardened power MOSFETs of both N-Chan- Total Dosenel and P-Channel enhancement types with ratings from100V to 500V, 1A to 60A, and on resistance as low as- Meets P
jansr2n7294.pdf

JANSR2N7294Formerly FRF250R4 23A, 200V, 0.115 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 23A, 200V, rDS(ON) = 0.115 The Intersil Corporation has designed a series of SECONDGENERATION hardened power MOSFETs of both N-Chan- Total Dosenel and P-Channel enhancement types with ratings from100V to 500V, 1A to 60A, and on resistance as low as- Meets P
Datasheet: 2N7269U , 2N7272 , 2N7275 , 2N7278 , 2N7281 , 2N7291 , 2N7293 , 2N7295 , 5N50 , 2N7334 , 2N7335 , 2N7335E3 , 2N7380 , 2N7381 , 2N7394 , 2N7394U , 2N7405 .
History: AMA461P | IRFS630B | SML10026DFN
Keywords - 2N7297 MOSFET datasheet
2N7297 cross reference
2N7297 equivalent finder
2N7297 lookup
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History: AMA461P | IRFS630B | SML10026DFN



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