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2N7297 Specs and Replacement


   Type Designator: 2N7297
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO-204AA
 

 2N7297 substitution

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2N7297 Specs

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2n7291 2n7293 2n7295 2n7297.pdf pdf_icon

2N7297

INCH POUND The documentation and process conversion measures necessary to comply with this revision shall MIL-PRF-19500/606B be completed by 28 October 2004. 28 July 2004 SUPERSEDING MIL-PRF-19500/606A 6 February 1998 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7291, 2N729... See More ⇒

 9.1. Size:46K  intersil
jansr2n7292.pdf pdf_icon

2N7297

JANSR2N7292 Formerly FRF150R4 25A, 100V, 0.070 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 25A, 100V, rDS(ON) = 0.070 The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Chan- Total Dose nel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as - Meets P... See More ⇒

 9.2. Size:69K  intersil
jansr2n7294.pdf pdf_icon

2N7297

JANSR2N7294 Formerly FRF250R4 23A, 200V, 0.115 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 23A, 200V, rDS(ON) = 0.115 The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Chan- Total Dose nel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as - Meets P... See More ⇒

Detailed specifications: 2N7269U , 2N7272 , 2N7275 , 2N7278 , 2N7281 , 2N7291 , 2N7293 , 2N7295 , IRFP064N , 2N7334 , 2N7335 , 2N7335E3 , 2N7380 , 2N7381 , 2N7394 , 2N7394U , 2N7405 .

Keywords - 2N7297 MOSFET specs

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