All MOSFET. 2N7335 Datasheet

 

2N7335 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N7335

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.4 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 0.75 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 15 nC

Rise Time (tr): 60 nS

Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm

Package: MO-036AB

2N7335 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N7335 Datasheet (PDF)

1.1. 2n7335 2n7335e3.pdf Size:596K _update-mosfet

2N7335
2N7335

2N7335 Qualified Levels: JAN, JANTX, and QUAD P-CHANNEL MOSFET Available on JANTXV commercial Qualified per MIL-PRF-19500/599 versions DESCRIPTION This 2N7335 device is military qualified up to a JANTXV level for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For th

5.1. 2n7334.pdf Size:267K _update-mosfet

2N7335
2N7335

PD-90396H IRFG110 JANTX2N7334 JANTXV2N7334 POWER MOSFET REF:MIL-PRF-19500/597 THRU-HOLE (MO-036AB) 100V, QUAD N-CHANNEL ® HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFG110 0.7 Ω 1.0A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state res

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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