2N6759 Datasheet and Replacement
Type Designator: 2N6759
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 350 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 35 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 300 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO3
2N6759 substitution
2N6759 Datasheet (PDF)
2n6756 irf130.pdf
PD - 90333FIRF130REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6756HEXFETTRANSISTORS JANTXV2N6756THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF130 100V 0.18 14AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique process
2n6758 irf230.pdf
PD - 90334F IRF230REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6758HEXFETTRANSISTORS JANTXV2N6758THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF230 200V 0.40 9.0ATO-3The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique
Datasheet: 2N6756JTXV , 2N6757 , 2N6758 , 2N6758JAN , 2N6758JANTX , 2N6758JANTXV , 2N6758JTX , 2N6758JTXV , IRF530 , 2N6760 , 2N6760JAN , 2N6760JANTX , 2N6760JANTXV , 2N6760JTX , 2N6760JTXV , 2N6761 , 2N6762 .
History: SPA11N80C3
Keywords - 2N6759 MOSFET datasheet
2N6759 cross reference
2N6759 equivalent finder
2N6759 lookup
2N6759 substitution
2N6759 replacement
History: SPA11N80C3
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