2N6759 Datasheet. Specs and Replacement
Type Designator: 2N6759 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 350 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 35 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 300 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO3
📄📄 Copy
2N6759 substitution
- MOSFET ⓘ Cross-Reference Search
2N6759 datasheet
2n6756 irf130.pdf
PD - 90333F IRF130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6756 HEXFET TRANSISTORS JANTXV2N6756 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/542] 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF130 100V 0.18 14A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique process... See More ⇒
2n6758 irf230.pdf
PD - 90334F IRF230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6758 HEXFET TRANSISTORS JANTXV2N6758 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/542] 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF230 200V 0.40 9.0A TO-3 The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique... See More ⇒
Detailed specifications: 2N6756JTXV, 2N6757, 2N6758, 2N6758JAN, 2N6758JANTX, 2N6758JANTXV, 2N6758JTX, 2N6758JTXV, IRF1010E, 2N6760, 2N6760JAN, 2N6760JANTX, 2N6760JANTXV, 2N6760JTX, 2N6760JTXV, 2N6761, 2N6762
Keywords - 2N6759 MOSFET specs
2N6759 cross reference
2N6759 equivalent finder
2N6759 pdf lookup
2N6759 substitution
2N6759 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
