2N7380 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2N7380
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 14.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 40 nC
trⓘ - Rise Time: 60 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO-257AA
2N7380 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N7380 Datasheet (PDF)
2n7380.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/614 DEVICES LEVELS 2N7380 JANSM (3K RAD(Si)) JANSD (10K RAD(Si))JANSR (100K RAD(Si))JANSF (300K RAD(Si))ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Pa
2n7381.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/614 DEVICES LEVELS 2N7381 JANSM (3K RAD(Si)) JANSD (10K RAD(Si))JANSR (100K RAD(Si))JANSF (300K RAD(Si))ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Pa
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
