All MOSFET. BSC079N03S Datasheet

 

BSC079N03S Datasheet and Replacement


   Type Designator: BSC079N03S
   Marking Code: 079N03S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 14.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 13 nC
   tr ⓘ - Rise Time: 4.2 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0079 Ohm
   Package: TDSON-8
 

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BSC079N03S Datasheet (PDF)

 ..1. Size:342K  infineon
 bsc079n03s.pdf pdf_icon

BSC079N03S

BSC079N03S GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 7.9mDS(on),max Optimized technology for notebook DC/DC convertersI 40 AD Qualified according to JEDEC1) for target applications N-channel Logic levelP-TDSON-8P-TDSON-8 Excellent gate charge x R product (FOM)DS(on) Very low on-resi

 0.1. Size:380K  infineon
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BSC079N03S

BSC079N03S GProduct SummaryOptiMOS2 Power-TransistorFeatures V 30 VDSR 7.9 Fast switching MOSFET for SMPS mDS(on),maxI 40 A Optimized technology for notebook DC/DC convertersD Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

 5.1. Size:384K  infineon
 bsc079n03lscg.pdf pdf_icon

BSC079N03S

BSC079N03LSC GOptiMOS3 Power-MOSFETProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 7.9mDS(on),max Optimized technology for DC/DC convertersI 50 AD Improved switching behaviourPG-TDSON-8 Qualified according to JEDEC1) for target applications N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very l

 7.1. Size:661K  infineon
 bsc079n10ns5 bsc079n10nsg.pdf pdf_icon

BSC079N03S

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