NDP05N50Z Datasheet. Specs and Replacement

Type Designator: NDP05N50Z  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 68 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO220AB

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NDP05N50Z datasheet

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NDP05N50Z

NDF05N50Z, NDP05N50Z, NDD05N50Z N-Channel Power MOSFET 500 V, 1.25 W Features http //onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche Tested VDSS RDS(on) (TYP) @ 2.2 A These Devices are Pb-Free and are RoHS Compliant 500 V 1.25 W ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) Rating Symbol NDF NDP NDD Unit N-Channel D (2) Drain-to-Source... See More ⇒

Detailed specifications: 2N7380, 2N7381, 2N7394, 2N7394U, 2N7405, BSC079N03S, FHF5N60, MDD1654, IRFZ44, NDS356P, P6503NJ, RU6888R, SVS5N70D, SVS5N70MJ, SVS5N70MN, SVS5N70F, SVS5N70MU

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