All MOSFET. NDS356P Datasheet

 

NDS356P Datasheet and Replacement


   Type Designator: NDS356P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 1.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 255 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: SOT23
 

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NDS356P Datasheet (PDF)

 ..1. Size:84K  fairchild semi
nds356p.pdf pdf_icon

NDS356P

March 1996NNDS356PP-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese P-Channel logic level enhancement mode -1.1 A, -20V. RDS(ON) = 0.3 @ VGS = -4.5V.power field effect transistors are produced usingProprietary package design using copper leadNationals proprietary, high cell density, DMOSframe for superior thermal and electrical

 8.1. Size:154K  onsemi
nds356ap.pdf pdf_icon

NDS356P

NDS356APP-Channel Logic Level Enhancement Mode Field Effect TransistorFeatures General Description-1.1 A, -30 V, RDS(ON) = 0.3 @ VGS=-4.5 VSuperSOTTM-3 P-Channel logic level enhancement mode RDS(ON) = 0.2 @ VGS=-10 V.power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS Industry standard outline SOT-23 surface mount

 8.2. Size:1477K  cn vbsemi
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NDS356P

NDS356APwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23

 9.1. Size:58K  fairchild semi
nds355n.pdf pdf_icon

NDS356P

March 1996 NDS355N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel logic level enhancement mode power field 1.6A, 30V. RDS(ON) = 0.125 @ VGS = 4.5V.effect transistors are produced using Fairchild's proprietary,Proprietary package design using copper lead frame forhigh cell density, DMOS technology. This very high densi

Datasheet: 2N7381 , 2N7394 , 2N7394U , 2N7405 , BSC079N03S , FHF5N60 , MDD1654 , NDP05N50Z , IRFP460 , P6503NJ , RU6888R , SVS5N70D , SVS5N70MJ , SVS5N70MN , SVS5N70F , SVS5N70MU , WFP85N06 .

History: WMO175N10LG4 | VP2206N3

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