NDS356P - описание и поиск аналогов

March 1996 N NDS356P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode -1.1 A, -20V. RDS(ON) = 0.3 @ VGS = -4.5V. power field effect transistors are produced using Proprietary package design using copper lead Nationals proprietary, high cell density, DMOS frame for superior thermal and electrical

NDS356AP P-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description -1.1 A, -30 V, RDS(ON) = 0.3 @ VGS=-4.5 V SuperSOTTM-3 P-Channel logic level enhancement mode RDS(ON) = 0.2 @ VGS=-10 V. power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS Industry standard outline SOT-23 surface mount

NDS356AP www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-23

March 1996 NDS355N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field 1.6A, 30V. RDS(ON) = 0.125 @ VGS = 4.5V. effect transistors are produced using Fairchild's proprietary, Proprietary package design using copper lead frame for high cell density, DMOS technology. This very high densi

March 1996 NDS351N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power 1.1A, 30V. RDS(ON) = 0.25 @ VGS = 4.5V. field effect transistors are produced using Fairchild's Proprietary package design using copper lead frame for proprietary, high cell density, DMOS technology. This superior thermal

January 1997 NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 N-Channel logic level enhancement mode 1.7A, 30 V, RDS(ON) = 0.125 @ VGS = 4.5 V power field effect transistors are produced using Fairchild's RDS(ON) = 0.085 @ VGS = 10 V. proprietary, high cell density, DMOS technology. This very high density proce

June 2003 NDS351AN N-Channel, Logic Level, PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced 1.4 A, 30 V. RDS(ON) = 160 m @ VGS = 10 V using Fairchild Semiconductor s advanced RDS(ON) = 250 m @ VGS = 4.5 V PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switc

March 1996 NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power -0.85A, -20V. RDS(ON) = 0.5 @ VGS = -4.5V. field effect transistors are produced using Fairchild's Proprietary package design using copper lead frame for proprietary, high cell density, DMOS technology. This superior therma

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description 1.7A, 30 V, RDS(ON) = 0.125 @ VGS = 4.5 V SuperSOTTM-3 N-Channel logic level enhancement RDS(ON) = 0.085 @ VGS = 10 V. mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS Industry standard outline SOT-23 surface mou

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

SMD Type MOSFET P-Channel MOSFET NDS352AP (KDS352AP) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 Features 3 VDS (V) =-30V ID =-0.9 A (VGS =-4.5V) RDS(ON) 0.3 (VGS =-10V) 1 2 +0.02 +0.1 0.15 -0.02 D 0.95 -0.1 RDS(ON) 0.5 (VGS =-4.5V) 1.9+0.1 -0.2 1.Gate 2.Source G S 3.Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Ra

NDS352AP www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-23