SVS5N70MJ PDF and Equivalents Search

 

SVS5N70MJ Specs and Replacement

Type Designator: SVS5N70MJ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26.3 nS

Cossⓘ - Output Capacitance: 21 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO-251J

SVS5N70MJ substitution

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SVS5N70MJ datasheet

 ..1. Size:465K  silan
svs5n70dtr svs5n70mj svs5n70mn svs5n70f svs5n70mu.pdf pdf_icon

SVS5N70MJ

SVS5N70D(MJ)(MN)(F)(MU) 5A 700V MOS 2 SVS5N70D(MJ)(MN)(F)(MU) N MOSFET MOS 1 1 2 3 3 SVS5N70D(MJ)(MN)(F)(MU) ... See More ⇒

 7.1. Size:481K  silan
svs5n70.pdf pdf_icon

SVS5N70MJ

SVS5N70D/MJ/MN/F/MU_Datasheet 5A, 700V DP MOS POWER TRANSISTOR DESCRIPTION SVS5N70D/MJ/MN/F/MU is an N-channel enhancement mode high voltage power MOSFETs produced using Silan s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. ... See More ⇒

Detailed specifications: BSC079N03S, FHF5N60, MDD1654, NDP05N50Z, NDS356P, P6503NJ, RU6888R, SVS5N70D, IRF640N, SVS5N70MN, SVS5N70F, SVS5N70MU, WFP85N06, 2N5653, 2N5654, 2N60A, 2N60AF

Keywords - SVS5N70MJ MOSFET specs

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