SVS5N70MJ MOSFET. Datasheet pdf. Equivalent
Type Designator: SVS5N70MJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 19.2 nC
trⓘ - Rise Time: 26.3 nS
Cossⓘ - Output Capacitance: 21 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: TO-251J
SVS5N70MJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVS5N70MJ Datasheet (PDF)
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SVS5N70D/MJ/MN/F/MU_Datasheet 5A, 700V DP MOS POWER TRANSISTOR DESCRIPTION SVS5N70D/MJ/MN/F/MU is an N-channel enhancement mode high voltage power MOSFETs produced using Silans DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.
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Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: NCE65TF130F | 2SK533 | CHM72A3NGP | NCE65T1K2I | BRFL20N65 | TPCA8054-H
History: NCE65TF130F | 2SK533 | CHM72A3NGP | NCE65T1K2I | BRFL20N65 | TPCA8054-H
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