WFP85N06 Datasheet and Replacement
Type Designator: WFP85N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 176 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 85 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 200 nS
Cossⓘ - Output Capacitance: 900 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: TO220
WFP85N06 substitution
WFP85N06 Datasheet (PDF)
wfp85n06.pdf
Wisdom SemiconductorWFP85N06N-Channel MOSFETFeatures 2. DrainSymbol RDS(on) (Max 0.013 )@VGS=10V Gate Charge (Typical 70nC) Improved dv/dt Capability, High Ruggedness 1. Gate 100% Avalanche Tested Maximum Junction Temperature Range (175C)3. Source General DescriptionTO-220This Power
Datasheet: NDS356P , P6503NJ , RU6888R , SVS5N70D , SVS5N70MJ , SVS5N70MN , SVS5N70F , SVS5N70MU , P55NF06 , 2N5653 , 2N5654 , 2N60A , 2N60AF , 2N60G , 2N6568 , 2N6659-2 , 2N6659X .
History: UPA2713GR | FDPF44N25TRDTU | WMP12N80M3 | IPP80N06S2-H5 | JCS110N07 | WMK26N60C4 | HYG065N07NS1U
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History: UPA2713GR | FDPF44N25TRDTU | WMP12N80M3 | IPP80N06S2-H5 | JCS110N07 | WMK26N60C4 | HYG065N07NS1U
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