WFP85N06 Datasheet. Specs and Replacement

Type Designator: WFP85N06  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 176 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 200 nS

Cossⓘ - Output Capacitance: 900 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: TO220

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WFP85N06 datasheet

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WFP85N06

Wisdom Semiconductor WFP85N06 N-Channel MOSFET Features 2. Drain Symbol RDS(on) (Max 0.013 )@VGS=10V Gate Charge (Typical 70nC) Improved dv/dt Capability, High Ruggedness 1. Gate 100% Avalanche Tested Maximum Junction Temperature Range (175 C) 3. Source General Description TO-220 This Power... See More ⇒

Detailed specifications: NDS356P, P6503NJ, RU6888R, SVS5N70D, SVS5N70MJ, SVS5N70MN, SVS5N70F, SVS5N70MU, IRF3710, 2N5653, 2N5654, 2N60A, 2N60AF, 2N60G, 2N6568, 2N6659-2, 2N6659X

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