4614 Datasheet and Replacement

Shenzhen Tuofeng Semiconductor Technology co., LTDPb 4614 Pb free Complementary Enhancement Mode Field Effect Transistor PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel) VDSS ID RDS(on) (m-ohm) Max VDSS ID RDS(on) (m-ohm) Max 31 @ VGS = 10 V,ID=6A 45 @ VGS = -10V,ID=-5A 40V 6A -40V -5A 45 @ VGS = 4.5V,ID=5A 63 @ VGS = -4.5V,ID=-2A Absolute Maximum Ratings (T =25oC, un

Ordering number:EN3578PNP/NPN Epitaxial Planar Silicon Transistors2SA1770/2SC4614High-Voltage Switching ApplicationsFeatures Package Dimensions Adoption of MBIT process.unit:mm High breakdown voltage and large current capacity.2064[2SA1770/2SC4614]E : EmitterC : CollectorB : Base( ) : 2SA1770SANYO : NMPSpecificationsAbsolute Maximum Ratings at Ta = 25CP

Ordering number:ENN3578PNP/NPN Epitaxial Planar Silicon Transistors2SA1770/2SC4614High-Voltage Switching ApplicationsFeatures Package Dimensions Adoption of MBIT process.unit:mm High breakdown voltage and large current capacity.2064A[2SA1770/2SC4614]2.51.456.9 1.00.60.9 0.51 2 30.451 : Emitter2 : Collector( ) : 2SA17703 : Base2.54 2.54Specificat

Ordering number : EN3578A2SA1770/2SC4614Bipolar Transistorhttp://onsemi.com() () ( ) ( )160V, 1.5A, Low VCE sat , PNP NPN Single NMPFeatures Adoption of MBIT process High breakdown voltage and large current capacity( )2SA1770SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO (--)180 VC

AO461440V Dual P + N-Channel MOSFETGeneral Description Product SummaryN-Channel P-ChannelThe AO4614 uses advanced trench technology VDS (V) = 40V -40VMOSFETs to provide excellent RDS(ON) and low gateID = 6A (VGS=10V) -5A (VGS = -10V)charge. The complementary MOSFETs may be used inRDS(ON) RDS(ON)H-bridge, Inverters and other applications.

AO4614B40V Dual P + N-Channel MOSFETGeneral Description Product SummaryN-Channel P-ChannelThe AO4614B uses advanced trench technology VDS (V) = 40V, -40VMOSFETs to provide excellent RDS(ON) and low gateID = 6A (VGS=10V) -5A (VGS=-10V)charge. The complementary MOSFETs may be usedRDS(ON)in H-bridge, Inverters and other applications.

BRCS4614SC Rev.A Jun.-2020 DATA SHEET / Descriptions SOP-8 MOS Complementary Enhancement MOSFET in a SOP-8 Plastic Package. / Features N-channel P-channel VDS(V)=40V VDS(V)=-40V ID=6A ID=-5A RDS(ON)

SMD Type MOSFETComplementary Trench MOSFET AO4614B (KO4614B)SOP-8 Unit:mm Features N-Channel : VDS (V) = 40VID = 6 A (VGS = 10V)1.50 0.15RDS(ON) 30m (VGS = 10V)RDS(ON) 38m (VGS = 4.5V)1 S2 5 D1 P-Channel : 6 D12 G27 D23 S1 VDS (V) = -40V8 D24 G1ID = -5 A (VGS = -10V)RDS(ON) 45m (VGS = -10V)RDS(ON) 63m (VGS = -4.5V)

SMD Type MOSFETComplementary Trench MOSFET AO4614A (KO4614A)SOP-8 Unit:mm Features N-Channel : VDS (V) = 40VID = 6 A (VGS = 10V)1.50 0.15RDS(ON) 31m (VGS = 10V)RDS(ON) 45m (VGS = 4.5V)1 S2 5 D1 6 D1 P-Channel : 2 G27 D23 S1 VDS (V) = -40V8 D24 G1ID = -5 A (VGS = -10V)RDS(ON) 45m (VGS = -10V)RDS(ON) 63m (VGS = -4.5V)

Complementary MOSFET ELM14614AA-NGeneral Description Features ELM14614AA-N uses advanced trench N-channel P-channeltechnology to provide excellent Rds(on) Vds=40V Vds=-40Vand low gate charge. Id=6A(Vgs=10V) Id=-5A(Vgs=-10V) Rds(on)

http://www.ncepower.comNCE4614BN and P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE4614B uses advanced trench technology to provideexcellent R and low gate charge . The complementaryDS(ON)MOSFETs may be used to form a level shifted high sideswitch, and for a host of other applications.N-channelP-channelSchematic diagramGeneral Features N-ChannelV =40V,I

Pb Free Producthttp://www.ncepower.com NCE4614N and P-Channel Enhancement Mode Power MOSFET Description The NCE4614 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS =4

http://www.ncepower.comNCE4614CN and P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE4614C uses advanced trench technology to provideexcellent R and low gate charge. The complementaryDS(ON)MOSFETs may be used to form a level shifted high sideswitch, and for a host of other applications.N-channelP-channelSchematic diagramGeneral Features N-ChannelV =40V,I

SL4614Dual Enhancement Mode MOSFET (N-and P-Channel)Features Pin DescriptionD1 N ChannelD1D2D240V/7.5A,RDS(ON) = 21m (max.) @ VGS = 10VS1RDS(ON) = 25m (max.) @ VGS = 4.5VG1S2 P ChannelG2-40V/-5.5A,Top View of SOP-8RDS(ON) = 38m (max.) @ VGS =-10V(8) (7)(6) (5)D1 D1RDS(ON) = 62m (max.) @ VGS =-4.5VD2 D2 100% UIS + Rg Tested Reliable and Rugged

STC4614 N&P Pair Enhancement Mode MOSFET 10.0A / -10.0A DESCRIPTION The STC4614 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application

ASDM4614S40V N A ND P-Channel MOSFETFeatures Product SummaryN-Channel High power and current handing capabilityBVDSS ID Lead free product is acquired RDSON.Typ@10V Surface mount package40V 28m 7AP-ChannelApplication PWM applications BVDSS IDRDSON.Typ@10V Load switch-6A-40V 38m Power management top viewASCENDN-channel P-ch

SOP-8 Plastic-Encapsulate MOSFETS SI4614N and P-Channel Enhancement Mode Power MOSFET Description The SI4614 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. N-channel P-channelGeneral Features N-Channel Schematic diagr

PTS4614 40V/7A N+P Channel Advanced Power MOSFET Features Low RDS(on) @VGS=5V Key Items NMOS PMOS Unit 5V Logic Level Control BVDSS 40 -40 V N+P Dual Channel SOP8 Package ID 8 7 A Pb-Free, RoHS Compliant RDSON1 14 28 m RDSON2 19 33 m Applications High Side Load Switch Battery Switch Optimized for Power Management Applications for Po

TW4614SQ-X60V Complementary Enhancement Mode Power MOSFET Features General Description N-channel P-channel used in inverter VDS = 60V, VDS = -60 V other applications ID = 4.4A ID = -4.2A RDS(ON) RDS(ON) VGS= 10V, TYP 37 m VGS= -10V, TYP 53 m VGS= 4.5V, TYP 43 m VGS= -4.5V, TYP 60 m Pin Configurations SOP8 Absolute Maximum Ratings @T =25

SM4614BPRL-40V /-6A Single P Power MOSFET C P04C P -40V /-6A Single P Power MOSFET 6P04CGeneral Description -40 VV DS-40V /-6A Single P Power MOSFET 44.1 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 69.3 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant -6 AIDTape and reelPart ID Package Type Markinginfomation100% UIS Tested100% Rg Test

AO4614&-30Vwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at

N and P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-channel P-channel N-Channel VDS = 40V,ID =7A Schematic diagram RDS(ON)

HM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET NP MOS N-CH VDS= 40V P-CH VDS= - 40V RDS(ON), Vgs@10V, Ids@6.0A = 31m RDS(ON), Vgs@-10V, Ids@-5.0A = 45m RDS(ON), Vgs@4.5V, Ids@5.0A= 45m RDS(ON), Vgs@-4.5V, Ids@-4.0A = 63m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resist

VS4614AS-A45V/13A N-Channel Advanced Power MOSFETV DS 45 VFeaturesR DS(on),TYP@ VGS=10 V 11 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 17 m Low on-resistance RDS(on) @ VGS=4.5 VI D 13 A Fast Switching and High efficiency Pb-free lead plating; RoHS compliantSOP8Part ID Package Type Marking PackingVS4614AS-A SOP8 4614AS 3000PCS/ReelMaximum ratings, at