SFS9Z24 MOSFET. Datasheet pdf. Equivalent
Type Designator: SFS9Z24
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 29 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 7.5 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 15 nC
trⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 140 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO220F
SFS9Z24 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SFS9Z24 Datasheet (PDF)
sfs9z24.pdf
SFS9Z24Advanced Power MOSFETFEATURESBVDSS = -60 Vn Avalanche Rugged TechnologyRDS(on) = 0.28 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -7.5 An Improved Gate Chargen 175oC Operating TemperatureTO-220Fn Extended Safe Operating Arean Lower Leakage Current : 10 A(Max.) @ VDS = -60Vn Low RDS(ON) : 0.206 (Typ.)1231.Gate 2. Drain 3. Sourc
sfs9z14.pdf
SFS9Z14Advanced Power MOSFETFEATURESBVDSS = -60 Vn Avalanche Rugged TechnologyRDS(on) = 0.5 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -5.3 An Improved Gate Chargen 175oC Operating TemperatureTO-220Fn Extended Safe Operating Arean Lower Leakage Current : 10 A(Max.) @ VDS = -60Vn Low RDS(ON) : 0.362 (Typ.)1231.Gate 2. Drain 3. Source
sfs9z34.pdf
Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = -12 A Improved Gate Charge 175oC Operating Temperature Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -60V Low RDS(ON) : 0.106 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Rati
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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