SFS9Z24 Datasheet and Replacement
Type Designator: SFS9Z24
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 29 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7.5 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 140 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO220F
SFS9Z24 substitution
SFS9Z24 Datasheet (PDF)
sfs9z24.pdf

SFS9Z24Advanced Power MOSFETFEATURESBVDSS = -60 Vn Avalanche Rugged TechnologyRDS(on) = 0.28 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -7.5 An Improved Gate Chargen 175oC Operating TemperatureTO-220Fn Extended Safe Operating Arean Lower Leakage Current : 10 A(Max.) @ VDS = -60Vn Low RDS(ON) : 0.206 (Typ.)1231.Gate 2. Drain 3. Sourc
sfs9z14.pdf

SFS9Z14Advanced Power MOSFETFEATURESBVDSS = -60 Vn Avalanche Rugged TechnologyRDS(on) = 0.5 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -5.3 An Improved Gate Chargen 175oC Operating TemperatureTO-220Fn Extended Safe Operating Arean Lower Leakage Current : 10 A(Max.) @ VDS = -60Vn Low RDS(ON) : 0.362 (Typ.)1231.Gate 2. Drain 3. Source
sfs9z34.pdf

Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = -12 A Improved Gate Charge 175oC Operating Temperature Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -60V Low RDS(ON) : 0.106 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Rati
Datasheet: SFS9614 , SFS9620 , SFS9624 , SFS9630 , SFS9634 , SFS9640 , SFS9644 , SFS9Z14 , 50N06 , SFS9Z34 , SFU2955 , SFU9014 , SFU9024 , SFU9034 , SFU9110 , SFU9120 , SFU9130 .
History: WVM40N20 | NP90N04VDG | HPW080NE5SPA | KSK596 | NCE0202ZA | AON6790 | WTM3401
Keywords - SFS9Z24 MOSFET datasheet
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History: WVM40N20 | NP90N04VDG | HPW080NE5SPA | KSK596 | NCE0202ZA | AON6790 | WTM3401



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