All MOSFET. 16N60AF Datasheet

 

16N60AF MOSFET. Datasheet pdf. Equivalent


   Type Designator: 16N60AF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 40.2 nC
   trⓘ - Rise Time: 15.5 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.199 Ohm
   Package: TO-220F

 16N60AF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

16N60AF Datasheet (PDF)

 ..1. Size:474K  nell
 16n60a 16n60af 16n60b.pdf

16N60AF 16N60AF

RoHS 16N60 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(16A, 600Volts)DESCRIPTION The Nell 16N60 is a three-terminal silicon device with current conduction capability of 16A,Dfast switching speed, low on-state resistance,breakdown voltage rating of 600V ,and max. threshold voltage of 4 volts. They are designed for use in applications. sucha

 8.1. Size:163K  ixys
 ixzr16n60a ixzr16n60b.pdf

16N60AF 16N60AF

IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET NChannel Enhancement Mode N-Channel Enhancement Mode Switch Mode RF MOSFET Low Qg and Rg Low Capacitance Z-MOSTM MOSFET Process VDSS = 600 V High dv/dt Optimized for RF Operation Nanosecond Switching Ideal for Class C, D, & E Applications ID25 = 18 A Symbol Test Conditions Maximum Ratings RDS(on) 0.56

 8.2. Size:457K  trinnotech
 tman16n60a.pdf

16N60AF 16N60AF

TMAN16N60A N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 16A

 8.3. Size:618K  trinnotech
 tmp16n60a tmpf16n60a.pdf

16N60AF 16N60AF

TMP16N60A(G)/TMPF16N60A(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 16A

 8.4. Size:426K  wuxi china
 cs16n60a8h.pdf

16N60AF 16N60AF

Silicon N-Channel Power MOSFET R CS16N60 A8H VDSS 600 V General Description ID 16 A CS16N60 A8, the silicon N-channel Enhanced PD(TC=25) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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