16N60AF - описание и поиск аналогов

RoHS 16N60 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (16A, 600Volts) DESCRIPTION The Nell 16N60 is a three-terminal silicon device with current conduction capability of 16A, D fast switching speed, low on-state resistance, breakdown voltage rating of 600V ,and max. threshold voltage of 4 volts. They are designed for use in applications. such a

IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET NChannel Enhancement Mode N-Channel Enhancement Mode Switch Mode RF MOSFET Low Qg and Rg Low Capacitance Z-MOSTM MOSFET Process VDSS = 600 V High dv/dt Optimized for RF Operation Nanosecond Switching Ideal for Class C, D, & E Applications ID25 = 18 A Symbol Test Conditions Maximum Ratings RDS(on) 0.56

TMAN16N60A N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 16A

TMP16N60A(G)/TMPF16N60A(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 16A

Silicon N-Channel Power MOSFET R CS16N60 A8H VDSS 600 V General Description ID 16 A CS16N60 A8, the silicon N-channel Enhanced PD(TC=25 ) 180 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow