19MT050XFAPBF Datasheet and Replacement
Type Designator: 19MT050XFAPBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 31 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 165 nS
Cossⓘ - Output Capacitance: 1165 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
Package: MTP
19MT050XFAPBF substitution
19MT050XFAPBF Datasheet (PDF)
19mt050xfapbf.pdf
19MT050XFAPbFVishay Semiconductors"Full Bridge" FREDFET MTP (Power MOSFET), 31 AFEATURES Low on-resistance High performance optimized built-in fastrecovery diodes Fully characterized capacitance and avalanche voltageand current Al2O3 DBC Very low stray inductance design for high speed operation UL approved file E78996MTP Compliant to RoHS directive
19mt050xf.pdf
19MT050XFHEXFET Power MOSFET"FULL-BRIDGE" FREDFET MTPFeatures 31 A VDSS = 500V Benefits
19mt050x.pdf
19MT050XFAPbFVishay Semiconductors"Full Bridge" FREDFET MTP (Power MOSFET), 31 AFEATURES Low on-resistance High performance optimized built-in fastrecovery diodes Fully characterized capacitance and avalanche voltageand current Al2O3 DBC Very low stray inductance design for high speed operation UL approved file E78996MTP Compliant to RoHS directive
Datasheet: 12N60A , 12N60AF , 13N110A , 13N60A , 13N60AF , 16N60A , 16N60AF , 16N60B , IRFZ48N , 1HN04CH , 1HP04CH , 1N60AF , 1N60E , 1N60F , 1N60G , 20N50B , 20N60A .
History: CRST049N08N | STP16NF06LFP
Keywords - 19MT050XFAPBF MOSFET datasheet
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History: CRST049N08N | STP16NF06LFP
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