19MT050XFAPBF Specs and Replacement
Type Designator: 19MT050XFAPBF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 31 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 165 nS
Cossⓘ - Output Capacitance: 1165 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
Package: MTP
19MT050XFAPBF substitution
- MOSFET ⓘ Cross-Reference Search
19MT050XFAPBF datasheet
19mt050xfapbf.pdf
19MT050XFAPbF Vishay Semiconductors "Full Bridge" FREDFET MTP (Power MOSFET), 31 A FEATURES Low on-resistance High performance optimized built-in fast recovery diodes Fully characterized capacitance and avalanche voltage and current Al2O3 DBC Very low stray inductance design for high speed operation UL approved file E78996 MTP Compliant to RoHS directive... See More ⇒
19mt050xf.pdf
19MT050XF HEXFET Power MOSFET "FULL-BRIDGE" FREDFET MTP Features 31 A VDSS = 500V Benefits ... See More ⇒
19mt050x.pdf
19MT050XFAPbF Vishay Semiconductors "Full Bridge" FREDFET MTP (Power MOSFET), 31 A FEATURES Low on-resistance High performance optimized built-in fast recovery diodes Fully characterized capacitance and avalanche voltage and current Al2O3 DBC Very low stray inductance design for high speed operation UL approved file E78996 MTP Compliant to RoHS directive... See More ⇒
Detailed specifications: 12N60A, 12N60AF, 13N110A, 13N60A, 13N60AF, 16N60A, 16N60AF, 16N60B, STP65NF06, 1HN04CH, 1HP04CH, 1N60AF, 1N60E, 1N60F, 1N60G, 20N50B, 20N60A
Keywords - 19MT050XFAPBF MOSFET specs
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