All MOSFET. 1HN04CH Datasheet

 

1HN04CH Datasheet and Replacement


   Type Designator: 1HN04CH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.27 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.4 nS
   Cossⓘ - Output Capacitance: 3.1 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: SOT-23
 

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1HN04CH Datasheet (PDF)

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1HN04CH

Ordering number : ENA0925C 1HN04CH Power MOSFET http://onsemi.com 100V, 8, 270mA, Single N-Channel Features 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Value UnitDrain to Source Voltage VDSS 100 V Gate to Source Voltage VGSS 20 V Drain Current (DC) ID 270 mA Drain Current (Pulse) IDP

Datasheet: 12N60AF , 13N110A , 13N60A , 13N60AF , 16N60A , 16N60AF , 16N60B , 19MT050XFAPBF , NCEP15T14 , 1HP04CH , 1N60AF , 1N60E , 1N60F , 1N60G , 20N50B , 20N60A , 24N50A .

History: FDB86366-F085 | FDB9403F085

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