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1HN04CH Specs and Replacement

Type Designator: 1HN04CH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.27 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.4 nS

Cossⓘ - Output Capacitance: 3.1 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm

Package: SOT-23

1HN04CH substitution

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1HN04CH datasheet

 ..1. Size:407K  onsemi
 1hn04ch.pdf pdf_icon

1HN04CH

Ordering number ENA0925C 1HN04CH Power MOSFET http //onsemi.com 100V, 8 , 270mA, Single N-Channel Features 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Value Unit Drain to Source Voltage VDSS 100 V Gate to Source Voltage VGSS 20 V Drain Current (DC) ID 270 mA Drain Current (Pulse) IDP ... See More ⇒

Detailed specifications: 12N60AF, 13N110A, 13N60A, 13N60AF, 16N60A, 16N60AF, 16N60B, 19MT050XFAPBF, IRF1405, 1HP04CH, 1N60AF, 1N60E, 1N60F, 1N60G, 20N50B, 20N60A, 24N50A

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