All MOSFET. 1HN04CH Datasheet

 

1HN04CH MOSFET. Datasheet pdf. Equivalent


   Type Designator: 1HN04CH
   Marking Code: LX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.6 V
   |Id|ⓘ - Maximum Drain Current: 0.27 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 0.9 nC
   trⓘ - Rise Time: 7.4 nS
   Cossⓘ - Output Capacitance: 3.1 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: SOT-23

 1HN04CH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

1HN04CH Datasheet (PDF)

 ..1. Size:407K  onsemi
 1hn04ch.pdf

1HN04CH 1HN04CH

Ordering number : ENA0925C 1HN04CH Power MOSFET http://onsemi.com 100V, 8, 270mA, Single N-Channel Features 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Value UnitDrain to Source Voltage VDSS 100 V Gate to Source Voltage VGSS 20 V Drain Current (DC) ID 270 mA Drain Current (Pulse) IDP

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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