2MI50S-050 PDF and Equivalents Search

 

2MI50S-050 Specs and Replacement

Type Designator: 2MI50S-050

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 400 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 900 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: MODULE

2MI50S-050 substitution

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2MI50S-050 datasheet

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2MI50S-050

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Detailed specifications: 1N60E, 1N60F, 1N60G, 20N50B, 20N60A, 24N50A, 24N50B, 24N50C, RU7088R, 30N20A, 38N10A, BCS4N10, BFC60, BFD63, BFD71, BFD77, BFD82

Keywords - 2MI50S-050 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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